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Unique Technologies Tapped To Lower FET On-Resistance And Gate Charge

Two new technologies - namely, aluminum strap bonding (Al-Strap) and ultra-high-speed U-MOS III (UHS U-MOS III) - have been tapped to produce power MOSFETs having significantly lower on-resistance and gate charge. Al-Strap technology, a proprietary bonding technique for standard SOP-8 packages, employs aluminum connections or straps between chip and terminal to reduce the package's conduction resistance. UHS U-MOS III process technology, in turn, is designed to provide a higher cell density and a shorter trench than can the existing, U-MOS III generation process. Together, the new technologies yield power FETs that improve on-resistance (RDS(on)) by 34% (typ.) at VGS = 4.5V and reduce gate charge (QSW) by 14% (typ.) compared to U-MOS III with standard wire bond technology. The first two members of the new TPCxxxx-H power MOSFET family include the 30V, single n-channel TPC8017-H (15A) and TPC8018-H (18A) devices that provide on-resistances of 6.6 milliohms and 4.6 milliohms, respectively, at VGS = 10V. Al-Strap and U-MOS III have also been used to produce 30V, single n-channel TPC8015-H (13A) and TPC8016-H (15A) MOSFETs that exhibit RDS(on) of 8 milliohms and 5.7 milliohms, respectively, at VGS=10V. Depending on device, sample prices range from $0.40 to $0.60 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (800) 879-4963.


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