Claimed to be the first commercially available power MOSFET with an on-chip temperature-sensing diode, the SUB60N04-15LT is designed to protect power circuitry in automotive electronics. The device combines a 15 ohm power MOSFET with back-to-back poly-silicon diodes integrated onto the chip. It carries and ESD rating of 2 kV and maximum junction temperature is 175°C.
A non-committed diode features a tight tolerance on forward voltage that can be used to provide a shutdown signal. The forward voltage falls to about 0.4V with a bias current of 250 µA when the device is close to the maximum temperature. Sample quantities are available now with deliveries from eight to 12 weeks ARO and pricing is $0.93 each/100,000.
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