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NEC MOSFETs offer 1.4 milliOhms on-resistance

Oct 26, 2005

Targeting automotive applications, NEC Electronics America Inc. has introduced a series of power MOSFETs with 1.4 milliOhms typical on-resistance. The NP series combines innovative trench technologies with packaging techniques that result in low leakage current, according to Bart Ladd, NEC's general manager, standard solutions strategic business unit.

"We are seeing an increasing demand for power management devices that are smaller and more power-efficient, yet still provide the high current capabilities and reliability required by automotive systems, motor control applications, dc/dc converters and uninterruptible power supplies," he said. The first device in the new series, NP110, is available now.

NEC's NP series MOSFETs are based on the firm's 0.25 μ UMOS-4 process technology, which enabled smaller trenches. NEC designers fabricated MOSFET structures along the sides of the trenches, further reducing the amount of silicon space required and achieving a cell density of well over 180 million cells per square inch. Increasing the device's cell density reduced on-resistance.

The NP series also features TO-263 and TO-252 packages fabricated with a unique multibonding technology that increases the number of bonding wires from two and three to three and four, respectively. The additional bonding capability enables the MOSFET to manage high currents with very low on-resistance in a relatively small package that needs less battery power and less board space, resulting in easier management of heat dissipation.

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