150- and 200-V MOSFETs

Nov. 1, 2009
RATED FOR 150- and 200-V performance, the HEXFET power MOSFETs from International Rectifier are said to lower gate charge by 59% and 33%, respectively,

RATED FOR 150- and 200-V performance, the HEXFET® power MOSFETs from International Rectifier are said to lower gate charge by 59% and 33%, respectively, compared with competing devices. Designed for industrial applications such as SMPSs, UPSs, inverters, and dc motor drives, the series includes the IRFB4615PBF, IRFS4615PBF, IRFSL4615PBF, IRFB4620PBF, IRFS4620PBF, and IRFSL4620PBF devices.

As dc-dc power-converter applications advance and switching frequencies increase, input capacitance and gate charge play a significant role in overall efficiency. The MOSFETs are optimized for fast-switching circuits where switching losses are critical, and are well-suited as a primary switch for isolated dc-dc converters in telecom applications or driving light-load efficiency in any advanced dc-dc application.

The devices are qualified for industrial grade and feature Level 1 Moisture Sensitivity (MSL1). Available in TO220, D2PAK, TO262, DPAK and IPAK packages, the Pb-free MOSFETs are RoHS compliant.

Available immediately, the MOSFETs are priced from $0.83 each (IRFB4615PBF) and $0.82 each (IRFB4620PBF) in 10,000-unit quantities. Prices are subject to change.
International Rectifier
El Segundo, CA

http://www.irf.com

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