Early predictions of widespread dominance were somewhat premature, but over the next several years, wide-bandgap (WBG) devices using gallium-nitride-on-silicon (GaN on Si) and silcon-carbide (SiC) process technologies are expected to gradually replace traditional Si MOSFETs in many power applications. Transistors made with another WBG semiconductor—carbon in the form of synthetic diamond— hold even more promise, but production is still several years away...
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