Quad Infrared Emitting Diode Offers High Output

Designed for high-current, high power output applications, the CLE234E is capable of producing more than 600 mW of 880-nm radiation when pulsed with 10A at a low duty cycle. Radiation is produced by a high quantum-efficiency, Si-doped, amphoteric-junction AlGaAs diode that consists of four infrared elements on one substrate with anodes internally connected in parallel and cathodes bonded in pairs. Each pair is bonded to a separate header lead. This device is rated at a continuous forward current of 500 mA.