Electronicdesign 5326 Ir1203 B2
Electronicdesign 5326 Ir1203 B2
Electronicdesign 5326 Ir1203 B2
Electronicdesign 5326 Ir1203 B2
Electronicdesign 5326 Ir1203 B2

Industrial Power MOSFETs Feature Ultra-Low RDS(on)

Dec. 5, 2012
IR's new family of StrongIRFET 40 V single N-channel HEXFET power MOSFETs feature ultra-low on-state resistance (RDS(on)) for a variety of industrial applications including battery packs, inverters,
IR's new family of StrongIRFET 40 V single N-channel HEXFET power MOSFETs feature ultra-low on-state resistance (RDS(on)) for a variety of industrial applications including battery packs, inverters, uninterruptible power supplies, solar inverters, forklift trucks, power tools, mobility scooters and ORing and Hot Swap applications. The family of devices consists of a selection of 14 benchmark performance MOSFETs for the industrial market, providing designers the flexibility to select the most optimal device for their application. With ultra-low RDS(on) options ranging from 1.3 to 3.3 mΩ and high current rating options ranging from 85 A to 195 A, this family of power MOSFETs seeks to aid in improving system reliability and in saving on part count when replacing lower performing devices. Production orders for the StrongIRFET power MOSFETs are available immediately with prices ranging from $0.29 to $1.44 each/10,000.

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