Neubiberg, Germany: The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high body diode ruggedness. Based on the same technology platform, the C6 devices are optimised for ease of use while the E6 devices deliver the highest efficiency.
The C6/E6 series is the sixth generation of high-voltage SJ power MOSFETs from Infineon. The devices, which offer fast yet controlled switching performance, target applications that demand efficiency and power density. According to the company, they’re easy to design-in and suit various energy-efficient switching applications, such as notebook adapters, solar, and other switched-mode power-supply (SMPS) designs that require extra breakdown voltage headroom.
Compared to the CoolMOS C3 650V family, the new C6/E6 devices offer up to 20% lower energy storage in the output capacitance (E\\[SUBSCRIPT OSS\\]). In addition, an improved body diode shows higher ruggedness against hard commutation and reduces the reverse recovery charge by 25%. Their switching behaviour helps avoid excessive voltage and current slopes thanks to a balanced design with tuned gate resistors.
Samples of the IPA65R280C6/IPA65R280E6 (280m\\[GREEK OHM\\] in a TO220 FullPAK) and IPA65R380C6 / IPA65R380E6 (380m\\[GREEK OHM\\] in a TO220 FullPAK) are available now. Volume production of these first parts started this month. Infineon says the product range will steadily extend and is scheduled for completion by the end of 2010.