As the use of electronics in all sectors of society grows, so does the need for more efficient, higher-level, and more cost-effective power sources. This in turn is spearheading the development of power discrete devices like diodes, MOSFETs, integrated-gate bipolar transistors (IGBTs), gate turn-off and integrated gate turn-off (GTO and IGTO) thyristors, and power modules. Gallium-nitride (GaN) and silicon-carbide (SiC) power devices also await.
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