Integrated Silicon Solution Inc. (ISSI) has introduced three 256 Mb synchronous DRAMs with access times of 6 ns and 7 ns.
Sanjiv Asthana, vice president of sales and marketing, says extended temperature versions will be available next year to meet automotive requirements.
The 3.3 V devices are available in 64 Mb x4, 32 Mb x8, and 16 Mb x16 configurations. An 8 Mb x32 configuration and a DDR family are in development.
Asthana says the parts reflect the firm’s commitment to low- to medium-density DRAMs.