MOSFETs combine high threshold voltage, low on-resistance

Vishay Siliconix has introduced a line of n-channel MOSFETs that combine a 3.4 V threshold voltage with on-resistance as low as 2.7 milliOhms.
May 12, 2005

Vishay Siliconix has introduced a line of n-channel MOSFETs that combine a 3.4 V threshold voltage with on-resistance as low as 2.7 milliOhms.

The 10 devices, available in 40 V and 60 V versions, target high-temperature, high-current automotive and other applications with inductive loads, such as high-side switches, motor drives and 12 V boardnets.

MOSFETs can turn on spontaneously in high-temperature, high-current environments if their threshold voltage is impacted by heat and starts to approach 0 V. Designers sometimes added a negative voltage driver to the circuit, but that solution increased the circuit’s size, cost and complexity, according to Siliconix. Another option to use a device with a high threshold voltage, which could affect an undesirable increase in on-resistance.

Siliconix said its new devices deliver a high threshold voltage that avoids the problem of spontaneous turn-on, and low on-resistance. The devices are available in DPAK, D2PAK and PowerPAK SO-8 packages.

Sign up for Electronic Design Newsletters
Get the latest news and updates.

Voice Your Opinion!

To join the conversation, and become an exclusive member of Electronic Design, create an account today!