Flash Memory Boasts 70-ns Random Access Time

Oct. 8, 2008
Aimed at embedded applications, the Axcell M29W and M29DW high speed, single-level cell (SLC) NOR flash memory delivers 70-ns random access time with the capability to support 60 ns. These latest additions to the Axcell M29 family of products are

Aimed at embedded applications, the Axcell M29W and M29DW high speed, single-level cell (SLC) NOR flash memory delivers 70-ns random access time with the capability to support 60 ns. These latest additions to the Axcell M29 family of products are pin-for-pin compatible with existing product architectures, and are optimized for 256-Mbit applications in the automotive, consumer electronics, communications, and computing markets. The 256-Mbit Axcell M29W and Axcell M29DW are designed to simplify designs by supporting the popular, industry-standard command set. M29W supports uniform block architecture while M29DW provides a parameter block, multibank architecture that supports reads in one bank and program or erase functionality in an alternate bank. Both M29W and M29DW will support AEC-Q100 certification, a higher level reliability certification required by automotive manufacturers. The flash memory can provide a full-chip programming at speeds of nearly 3.2 Mbytes per second. “S” secure-compatible versions for increased device protection. Samples of the 256-Mbit Axcell M29W and M29DW flas memories are available now. Volume production starts in September 2009. NUMONYX B.V., Geneva, Switzerland. +41.21.822.3700.

Company: NUMONYX B.V.

Product URL: Click here for more information

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