STMicro introduces 250 A power MOSFET optimized for motor-drive efficiency

July 17, 2008

Targeting electric vehicles, among other applications, STMicroelectronics (www.st.com) has introduced a 250A surface-mount power MOSFET with low (1.5 milliohms typical) on-resistance to minimize energy conversion losses and enable higher performance.

Targeting electric vehicles, among other applications, STMicroelectronics has introduced a 250 A surface-mount power MOSFET with low (1.5 milli-ohms typical) on-resistance to minimize energy conversion losses and enable higher performance. In the future, the device will be eligible for automotive-grade applications.

Implemented in ST’s STripFET III fabrication process, the STV250N55F3 combines ST’s PowerSO-10 package with ribbon bonding to achieve low die-free package resistance as well as low switching losses and rugged avalanche characteristics. The nine-lead source connection reduces on-resistance and aids heat dissipation. The package is rated for 300 W dissipation at 25 °C.

The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55 V.

The ability to operate at temperatures up to 175 °C makes the STV250N55F3 suitable for use in high-current electric-traction applications. The STV250N55F3 is sampling now, with volume production scheduled for Q3 2008. It’s priced at $2.50 for 10,000 pieces.