Power MOSFETs Come In Hermetic Packaging

Built using the latest Power MOS V technology, a family of hermetically packaged power MOSFETs is said to provide faster switching and lower R_DS(ON) than the Power MOS IV devices they replace. All the devices are avalanche-energy rated and are available in TO-254, TO-258, TO-3 and TO-267 packages.The TO-267 devices are said to offer the highest current and lowest R_DS(ON) available in a three-leaded, through-hole hermetic package. Breakdown voltages range from 200V to 1000V, R_DS(ON) values range from 26 to 570 milliohms, and current ratings range from 17.3A to 65A. The APT5012WVR, for example, is rated at 40A, 120 milliohms and 500V breakdown voltage. One TO-267 device can replace multiple parallel lower-power MOSFETs for higher reliability and lower system cost.