Trench Gate MOSFETs Manufactured Using 0.8-µm Technology

Made using an advanced, 0.8-µm technology, these new trench gate MOSFETs are avalanche energy rated and also feature a high gate-to-source voltage rating of +30V, -20V. The devices have a maximum V_DS of 60V and R_DS(ON) of 5 milliohms typical and 6.5 milliohms maximum. They are available in through-hole packages that include TO-220, TO-3P, TO-262 and TO-220 full pack models. A surface-mount TO-263 (D²PAK) is also available.