Trench Gate MOSFETs Manufactured Using 0.8-µm Technology

    April 1, 2000
    Made using an advanced, 0.8-µm technology, these new trench gate MOSFETs are avalanche energy rated and also feature a high gate-to-source voltage rating of +30V, -20V. The devices have a maximum VDS of 60V and RDS(ON) of 5

    Made using an advanced, 0.8-µm technology, these new trench gate MOSFETs are avalanche energy rated and also feature a high gate-to-source voltage rating of +30V, -20V. The devices have a maximum VDS of 60V and RDS(ON) of 5 milliohms typical and 6.5 milliohms maximum. They are available in through-hole packages that include TO-220, TO-3P, TO-262 and TO-220 full pack models. A surface-mount TO-263 (D2PAK) is also available.

    Company: COLLMER SEMICONDUCTOR INC.

    Product URL: Click here for more information

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