A new gallium nitride (GaN)-based power device technology platform can provide customers with improvements in key application-specific figures of merit of up to a factor of 10, compared to state-of-the-art silicon-based technology platforms, according to International Rectifier Corp. Based on IR’s proprietary GaN-on-silicon epitaxial technology, the platform can increase performance and cut energy consumption in end applications in markets such as computing and communications, automotive, and appliances.
IR will introduce the GaN-based power device technology platform at a number of key industry events over the next two weeks including the Digital Power Forum ‘08 in San Francisco, from September 15-17; the Embedded Power Conference ‘08 in San Jose, from September 17-18; and the International Workshop on Power Supply on A Chip in Cork, Ireland, from September 22-24. Prototypes of several new products will be available to leading OEM customers at the Electronica tradeshow in Munich, Germany, Nov. 11-14.
International Rectifier
www.irf.com
