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    Power MOSFET Takes Another Swing At On Resistance

    Nov. 12, 2010
    In a TO-247 package, the 600V/47A SiHG47N60S n-channel power MOSFET specs a maximum on-resistance of 0.07O at a 10V gate drive and a gate charge of 216 nC.

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    In a TO-247 package, the 600V/47A SiHG47N60S n-channel power MOSFET specs a maximum on-resistance of 0.07Ω at a 10V gate drive and a gate charge of 216 nC. The device employs Vishay Super Junction technology, which minimizes on-state resistance and withstands high energy pulses in the avalanche and commutation mode. Pricing for the SiHG47N60S starts at $4.55 per piece. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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