First InGaN LED Chips Enter Pilot Stage

Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance blue and white LED prototypes in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 mm. The silicon wafers replace commonly used sapphire substrates with no loss of quality. Already in the pilot stage, the new LED chips are being tested. Dubbed the blue UX:3 chips, they achieve a brightness of 634 mW at 3.15V, equivalent to 58% efficiency. OSRAM OPTO SEMICONDUCTORS, San Jose, CA. (888) 446-7726.