Available with access times of 70, 85, 100 or 120 ns, the SYS88000RKX ultra-high-density SRAM module is organized as 8 Mb x 8 and is supplied in a 38-pin SIP with dimensions of 97.25 x 30.25 x 4.40 mm. Designed for applications where space is critical, the device has an operating current of 170 mA and CMOS standby current of 32 mA. A 2V data retention mode is available with data retention current of 1.2 mA. The device is available in commercial and industrial temperature grades.
Company: MOSAIC SEMICONDUCTOR INC.
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