Bringing the next wave of performance upgrades to desktop PCs, workstations, and servers, the company's 288 Mb Rambus DRAM (RDRAM) devices employ Rambus signaling level (RSL) technology to achieve data transfer rates up to 1,066 MHz (1 GHz). The chips are produced using a 0.13 µm process technology and are available in fine-pitch ball-grid array (FBGA) packages. Features of the 288 Mb device include sustained data transfers at 0.94 ns per two bytes (or 7.5 ns per 16 bytes), a write buffer, and three pre-charge mechanisms. Power management functions include multiple low-power states and power-down self refresh. The 288 Mb EDR2518ABSE-AEP device is priced at $20 each. The 256 MB EBR25EC8ABSA (160-pin SO-RIMM) and EBR25EC8ABKD modules are priced at $300 and $250 each, respectively. And the 512 MB EBR51EC8ABFD (184-pin RIMM) and EBR51EC8ABKD (160-pin SO-RIMM) are each priced at $750. ELPIDA MEMORY INC., Santa Clara, CA. (866) 355-8296.
Company: ELPIDA MEMORY INC.
Product URL: Click here for more information