Silicon Carbide Diodes Mature

Infineon Technologies has migrated its 300-V and 600-V thinQ silicon carbide diodes from a 2-in. manufacturing process to a 3-in. process. In addition to the resulting capacity expansion, this move enlarges Infineon’s product range with 2-A, 5-A, 8-A and 10-A 600-V products, and hence offers a wide range of 300-V and 600-V products.

With electronic properties that result in low leakage currents, low on-resistance and high current densities, silicon carbide (SiC) is suitable for high-blocking-voltage power semiconductors. SiC Schottky diodes allow significantly lower switching losses and higher switching frequencies than conventional power diodes fabricated in silicon or gallium arsenide technology.

For more information, visit www.infineon.com.