Infineon Technologies has migrated its 300-V and 600-V thinQ silicon carbide diodes from a 2-in. manufacturing process to a 3-in. process. In addition to the resulting capacity expansion, this move enlarges Infineon’s product range with 2-A, 5-A, 8-A ...
Infineon Technologies has migrated its 300-V and 600-V thinQ silicon carbide diodes from a 2-in. manufacturing process to a 3-in. process. In addition to the resulting capacity expansion, this move enlarges Infineon’s product range with 2-A, 5-A, 8-A and 10-A 600-V products, and hence offers a wide range of 300-V and 600-V products.
With electronic properties that result in low leakage currents, low on-resistance and high current densities, silicon carbide (SiC) is suitable for high-blocking-voltage power semiconductors. SiC Schottky diodes allow significantly lower switching losses and higher switching frequencies than conventional power diodes fabricated in silicon or gallium arsenide technology.
