Sixteen new power MOSFETs from Vishay Siliconix offer low on-resistance values down to 6.1 mΩ in the compact PowerPAK 1212-8 package. These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm × 3.3 mm by 1 mm—just one-third the size of the SO-8 package—as well as low thermal resistance of ‹2°C/W for an eightfold improvement when compared with 5-mm × 6-mm SO-8 devices. The PowerPAK 1212-8 package is a smaller version of the PowerPAK SO-8. The MOSFETs being introduced in the 1212-8 version take advantage of the advances in the TrenchFET Gen II process, which boosts cell density to 300 million cells.
The new devices target synchronous rectification, synchronous buck, and intermediate switching applications in point of load (POL) converters and high-density dc-to-dc converters. With their excellent electrical performance, these power MOSFETs serve as viable replacements for SO-8 devices in many applications.
Single n-channel devices feature on-resistance values ranging from 6.1 mΩ to 28 mΩ at a 4.5-V gate drive, and they include the 20-V Si7106DN, Si7108DN and Si7110DN; the 30 V Si7112DN and Si7114DN; and the 40-V Si7116DN. Dual n-channel devices offer on-resistance values down to 39 mΩ and include the 30-V Si7212DN and Si7214DN and the 40-V Si7216DN.
Also being released in the PowerPAK 1212-8 package are the 60-V Si7120DN, the dual 60-V Si7220DN, and the 75-V Si7812DN, 150-V Si7818DN, 220-V Si7302DN, and 250-V Si7802DN. These devices feature on-resistance values ranging from 135 mΩ to 435 mΩ at a 10-V gate drive. The 200-V Si7820DN was previously released.
Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.50.
For more information, visit www.vishay.com.
