High-voltage MOSFETs Optimize Efficiency and Reliability

Fairchild Semiconductor offers eight new high-voltage SuperFET MOSFETs designed to address demanding high-voltage, fast-switching applications requiring high efficiency, such as active power factor correction (PFC), lighting and ac-dc power supply systems.

SuperFET technology minimizes conduction losses and increases switching performance by lowering R_DS(ON) and gate charge (Qg). This technology is designed to withstand both high-speed voltage (di/dt) and current (dv/dt) switching transients, allowing the devices to operate reliably at higher frequencies. SuperFET devices also offer repetitive avalanche energy ratings that are an order of magnitude higher than alternative solutions. These features, combined with a maximum gate-to-source voltage rated at ±30 V, allow SuperFETs to provide improved ruggedness that makes them more reliable in high-voltage applications.

"As the breakdown voltage of a standard MOSFET rises, the R_DS(ON) goes up exponentially and leads to increased die size, a tradeoff that creates a challenge for designers," said JongMin Na, Fairchild's marketing manager, Power Supply and Industrial Power Applications, Power Discrete Group. "Fairchild's new SuperFET technology changes the relationship of the R_DS(ON) from being exponential to linear. This solution allows the device to achieve a very impressive R_DS(ON) and small die size at a 600-V breakdown voltage, which results in improved efficiency in end-applications."

An example of the SuperFET performance is the FCP7N60, a 600-V n-channel MOSFET with a typical R_DS(ON) of 0.53 Ω, a typical Qg of 25 nC, and an effective C_OSS of 60 pF. This device is 100% avalanche tested. For other specifications, see the datasheets provided at the links below.