IR Launches GaN Integrated Power Stage Devices

March 16, 2010
IR Launches GaN Integrated Power Stage Devices

El Segundo, California: Power-management company International Rectifier (IR) has introduced what it claims is the industry’s first family of commercial integrated power stage products employing its gallium-nitride (GaN) power device technology platform.

The iP2010 and iP2010 family of devices is designed for multiphase and point-of-load (POL) applications including servers, routers, switches, and general-purpose POL dc-dc converters.

The iP2010 and iP2011 integrate a fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a flip-chip package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices, says IR.

The iP2010 features an input voltage range of 7 to 13.2 V and an output voltage range of 0.6 to 5.5 V with an output current up to 30 A. The device operates up to 3 MHz. Operating up to 5 MHz, the pin-compatible iP2011 features the same input and output voltage range but is optimized for an output current up to 20 A.

Available in a land-grid array (LGA) package with small footprint, both devices are optimized for very low power loss. They also feature highly efficient dual-sided cooling. And, they comply with the European Union’s Restrictions on Hazardous Substances (RoHS).

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