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Hamamatsu Photonics Launches IR-Enhanced Silicon PIN Photodiodes

Oct. 12, 2010

Hertfordshire, England: Hamamatsu Photonics has developed a range of silicon detectors and image sensors that the company says offer enhanced near-infrared sensitivity.

Using laser-processing technology, microelectromechanical systems (MEMS) structures can be fabricated on the silicon surface. These structures then can act to reduce reflections and increase the surface area of the active element. This process increases the sensitivity in wavelengths longer than 800 nm.

The S11499 series is a family of PIN photodiodes utilising this new technology, offering a high sensitivity of 0.6 A/W at 1060 nm. The S11499 series is available in 3-mm diameter and 5-mm diameter active area types, which offer 30-MHz and 15-MHz bandwidths respectively.

Hamamatsu Photonics

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