Power MOSFETs feature ultra-low on-state resistance

International Rectifier introduces a family of HEXFET power MOSFETs featuring ultra-low on-state resistance (RDS(on)) in an industry-standard SOT-23 package for applications including battery charge and discharge switches, system and load switches, light load motor drives, and telecom equipment.
July 16, 2010

International Rectifier introduces a family of HEXFET power MOSFETs featuring ultra-low on-state resistance (RDS(on)) in an industry-standard SOT-23 package for applications including battery charge and discharge switches, system and load switches, light load motor drives, and telecom equipment.

Utilizing the company's latest mid-voltage silicon technology, the new SOT-23 MOSFET devices deliver a strong improvement in current handling by minimizing RDS(on) by as much as 90%.

The new SOT-23 MOSFET family covers the full range of voltages from -30 to 100 V with different levels of RDS(on) and gate charge (Qg) to provide an improved and broader range of design options for engineers looking for a compact, efficient, and cost-effective solution,say company sources. Qualified to moisture sensitivity level 1 (MSL1), the devices are offered lead free and are RoHS compliant.

For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.

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