PQFN products include MOSFETs designed for low power applications
July 15, 2011
International Rectifier has enhanced its PQFN product line with the introduction of a PQFN 2 x 2 mm and PQFN 3.3 x 3.3 mm package.
International Rectifier has enhanced its PQFN product line with the introduction of a PQFN 2 x 2 mm and PQFN 3.3 x 3.3 mm package. The new packages integrate two HEXFET MOSFETs incorporating the company's latest silicon technology to deliver a high density, cost effective component for low power applications, such as smart phones, tablet PCs, camcorders, digital still cameras, dc motors, and wireless inductive chargers as well as notebook PC, server, and Netcom equipment.
With a pair of power MOSFETs in each package, the PQFN2x2 and PQFN3.3x3.3 dual devices feature the flexibility of either common drain or half-bridge topologies. By including the company's low-voltage silicon technologies (N and P), the devices deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in just a 4 x 4 mm area.
The Dual PQFN family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. With a low profile of less than 1 mm, the devices are compatible with existing surface mount techniques, feature an industry-standard footprint, and are RoHS compliant.
For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.
