International Rectifier announces expansion of its portfolio of rugged and reliable ultra-fast 600-V Trench Insulated Gate Bipolar Transistors (IGBTs).
International Rectifier announces expansion of its portfolio of rugged and reliable ultra-fast 600-V Trench Insulated Gate Bipolar Transistors (IGBTs) with the introduction of the IRGP4067DPbF and IRGP4066DPbF devices for uninterruptible power supplies (UPS), solar, industrial motor, and welding applications.
The IRGP4067DPbF and IRGP4066DPbF employ Trench thin wafer technology to offer lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, the new devices are optimized for ultra-fast switching (8 to 30 KHz) with 5us short circuit rating and feature a low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.
Offered as both die and packaged devices, and available with or without short-circuit rating, other key features of the new devices include maximum junction temperature of 175° C and low EMI for improved reliability.
For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.
