Asymmetric Dual Power MOSFETs Offer Top Performance In Small Size

By combining low-side and high-side MOSFETs in one compact device while obtaining low on-resistance and high maximum current, the SiZ700DT TrenchFET in the new PowerPAIR package saves space and simplifies design. The package measures 6 by 3.7 mm and is 0.75 mm high, typical, or 28% thinner than the PowerPAK 1212-8 and PowerPAK SO-8, which both have a 1.04-mm profile. In some lower-current and lower-voltage applications, the PowerPAIR device could even be used to replace two SO-8-packaged MOSFETs, saving at least two-thirds on space. The SiZ700DT’s low-side Channel 2 MOSFET offers an on-resistance of 5.8 mO at 10 V and 6.6 mO at 4.5 V, and a maximum current of 17.3 A at 25°C and 13.9 A at 70°C. The high-side Channel 1 MOSFET features an on-resistance of 8.6 mO at 10 V and 10.8 mO at 4.5 V, and a maximum current of 13.1 A at 25°C and 10.5 A at 70°C. Samples and production quantities of the SiZ700DT TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders. The devices cost $0.40 each in 100,000-piece quantities. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (619) 336-0860.