Device Modeling Tools Aim At 0.13-μm Processes

March 4, 2002

A device modeling product, BSIMPro+, and a new version of RFPro for RF device modeling improve the accuracy of device models for very deep-submicron (0.13 µm and below) silicon processes, especially for wireless and networking...

David Maliniak

BSIMPro+ extracts accurate circuit simulation models and calibrates models to silicon measurements. It offers the first commercially available model extraction for complete BSIM4 and BSIM SOI models, critical for very deep-submicron, RF applications, and other new silicon processes. BSIMPro+ lets designers get the most accurate design information for all terminal currents of a MOSFET, including increasingly important gate-leakage current. BSIMPro+ comes with measurement capabilities for leaky MOS capacitance and self-heating characterization. Both are crucial for accurate nanometer device modeling.

RFPro improves its RF modeling and silicon measurement capabilities for all active and passive devices. It integrates the dc to RF characterization and modeling of an RF-ready compact model, such as BSIM4, into one package.

BSIMPro+ and RFPro are shipping now. Both run on Windows NT and 2000. BSIMPro+ starts at $43,800 and RFPro starts at $60,000 for a one-year time-based license.

Celestry Design Technologies Inc.
(408) 451-1210; www.celestry.com

About the Author

David Maliniak | MWRF Executive Editor

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy. David earned a B.A. in journalism at New York University.