Dual MOSFET Increases Power Density In Synchronous Buck Applications

Oct. 8, 2008
The FDMC8200 dual MOSFET delivers higher efficiency and power density for notebooks, netbooks, servers, telecom, and other DC-DC designs. The product integrates an optimized control (high-side) and synchronous (low-side) 30-V n-channel MOSFET into one

The FDMC8200 dual MOSFET delivers higher efficiency and power density for notebooks, netbooks, servers, telecom, and other DC-DC designs. The product integrates an optimized control (high-side) and synchronous (low-side) 30-V n-channel MOSFET into one 3-mm x 3-mm MLP module. Both MOSFETs are designed with the company's PowerTrench 7 technology that yields a very low RDS(ON), total gate charge (QG), and Miller charge (QGD). These enhancements result in high efficiency by minimizing conduction and switching losses. The FDMC8200 typically features an RDS(ON) of 24 m? on the high side and 9.5 m? on the low side. It can deliver over 9 A of current for mainstream computing applications. The dual MOSFET comes housed in a compact and thermally-enhanced 3-mm x 3-mm Power33 MLP package. Pricing is set at $0.50 each in 1000-piece quantities. Samples are available now. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (408) 822-2000.

Company: FAIRCHILD SEMICONDUCTOR

Product URL: Click here for more information

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