20-V Power MOSFET Boasts Small Package, On-Resistance

Oct. 8, 2008
The SiA921EDJ extends the p-channel TrenchFET Gen III technology to ultra-small packages for handheld electronics. The new dual 20-V power MOSFET comes in a thermally enhanced PowerPAK SC-70 with a 2- by 2-mm footprint, half the size of the TSOP-6.

The SiA921EDJ extends the p-channel TrenchFET Gen III technology to ultra-small packages for handheld electronics. The new dual 20-V power MOSFET comes in a thermally enhanced PowerPAK SC-70 with a 2- by 2-mm footprint, half the size of the TSOP-6. However, the device features an extremely low on-resistance comparable to the larger package: 59 mO at 4.5 V and 98 mO at 2.5 V, which translates into lower conduction losses and longer battery life. The device is suitable for use in dc-to-dc buck converters, as well as load, power amplifier, and battery switches in portable devices such as cell phones, smart phones, PDAs, and MP3 players. The MOSFET is halogen-free in accordance with IEC 61249-2-21. Samples and production quantities of the SiA921EDJ TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders. Prices start at $0.15 in 100,000-piece quantities. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (619) 336-0860.

Company: VISHAY INTERTECHNOLOGY INC.

Product URL: Click here for more information

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