www.infineon.com/memory Infineon rad hard memory solutions for space applications 2 Radiation hardened memories Space platforms require reliable, secure, and robust memory solutions capable of enduring harsh operating environments. These compute intensive applications put increasing demands on memory performance and density to handle the large amounts of data sourced from multiple sensors and processor nodes. Infineon's rad hard space memories are QML-V and QML-P certified, meeting space applications' reliability, performance, and life cycle demands. Our space memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility. Our portfolio includes: Volatile memories – Quad Data Rate (QDR)® II+ Synchronous SRAMs – Asynchronous SRAMs Non-volatile memories – Serial NOR Flash – Serial and Parallel F-RAMs Our HiRel space memories are used throughout satellite subsystems. Whether you're designing satellite payloads, buses, communications, or other spacecraft systems, our memories provide the highest reliability, highest performance, and superior radiation and single event effects (SEE) performance on the market. SPACE APPLICATIONS 3 Table of contents Product resouces summary 4 Infineon space memory portfolio 5 QDR® II+ SRAM 5 Fast async SRAM 6 F-RAM 7 RadTol NOR Flash 7 Rad hard NOR Flash 7 Where to Buy 8 4 SPACE APPLICATIONS Rad hard product resources summary Launching your space systems to new heights Glossary Radiation effects – Total Ionizing Dose (TID) Radiation: Resistance to permanent device damage caused by exposure to ionizing radiation (gamma rays) over life of the device. A trapped positive charge can result in field device turn-on. – Single Event Effects (SEE): Loss of data and possible physical device damage caused by the impact of radiation particle (heavy ions, protons, or neutrons) which may result in device latch-up where a high current state is observed. – Prompt Dose (PD): Resistance to minimum 20 ns X-ray pulse that can cause data corruption as well as device latch-up. QML-V/P and QML-Q screening DLAM QML certification is the highest standard of reliability issued by the United States government for microcircuit devices. This certification indicates that the device can be relied upon to function properly while being subjected to the harshest of conditions. Datapack Infineon offers the option of purchasing a datapack with all QML-certified products. This datapack tabulates data gathered during the part certification process including radiation data, read and record electrical data, and tri-temperature test data. The datapack is offered in both hard and soft copy formats and is matched to individual part serial numbers. Memory controller Memory controllers are available free of charge for Xilinx Virtex V5, Kintex US as well as for Microchip RTG4 and RTPolarFire FPGA’s for the RadHard 72M and 144M QDRII+ SRAM devices. The QDR-II+ SRAM controllers manage the intricate timing details of a DDR-based source synchronous timing architecture and ensure reliable data traffic between the FPGA and the QDRII+ SRAM memory. Controller embedded ECC (SECDEC) is also available as an RTL option if a higher level of radiation immunity is required to mitigate single event upsets. Please contact [email protected] for a copy of the RTL code and test bench. Infineon's 512 Mbit and 1 Gbit rad hard NOR Flash memory(pictured above) features QML certification for plastic packaging (QML-P; pictured left) and ceramic packaging (QML-V; pictured right). 5 Infineon space memory portfolio QDR® II+ SRAM The QDR synchronous SRAMs are true, high-speed cache memories that provide low latency and random memory access capability needed for high-performance applications such as on-board image processing, radar imaging payload applications, and satellite communications. Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/ dev.dy] Geo sync-solar min PD [Rad(Si)/s] 72 Mbit 5962F1120101VXA 72M QDR II+ x18 BURST of 2 DLAM QML V -55°C to 125°C QML-V Production 300 > 120 (125°C) < 1.34e-7 Immune 120 LET > 2e9 72 Mbit CYPT1542AV18- 250GCMB 72M QDR II+ x18 BURST of 2 Prototype -55°C to 125°C Prototype Production 72 Mbit 5962F1120102VXA 72M QDR II+ x18 BURST of 4 DLAM QML V -55°C to 125°C QML-V Production 300 > 120 (125°C) < 1.34e-7 Immune 120 LET > 2e9 72 Mbit CYPT1543AV18- 1X24M 72M QDR II+ Prototype Die -55°C to 125°C Prototype Production 72 Mbit CYPT1543AV18- 250GCMB 72M QDR II+ x18 BURST of 4 Prototype -55°C to 125°C Prototype Production 72 Mbit CYRS1543AV18- 1X24M 72M QDR II+ QML-V Die -55°C to 125°C QML-V Production 300 > 120 (125°C) < 1.34e-7 Immune 120 LET > 2e9 72 Mbit 5962F1120201VXA 72M QDR II+ x36 BURST of 2 DLAM QML V -55°C to 125°C QML-V Production 300 > 120 (125°C) < 1.34e-7 Immune 120 LET > 2e9 72 Mbit CYPT1544AV18- 250GCMB 72M QDR II+ x36 BURST of 2 Prototype -55°C to 125°C Prototype Production 72 Mbit 5962F1120202VXA 72M QDR II+ x36 BURST of 4 DLAM QML V -55°C to 125°C QML-V Production 300 > 120 (125°C) < 1.34e-7 Immune 120 LET > 2e9 72 Mbit CYPT1545AV18- 250GCMB 72M QDR II+ x36 BURST of 4 Prototype -55°C to 125°C Prototype Production 144 Mbit CYPT2642KV18- 250GCMB 144M QDR II+ x18 BURST of 2 Prototype -55°C to 125°C Prototype Production 144 Mbit 5962R1821401VXF 144M QDR II+ x18 BURST of 2 DLAM QML V -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit 5962R1821402VXF 144M QDR II+ x18 BURST of 4 DLAM QML V -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT2643KV18- 250GCMB 144M QDR II+ x18 BURST of 4 Prototype -55°C to 125°C Prototype Production 144 Mbit CYRS2643KV18- 1X24M 144M QDR II+ QML-V Die -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT2643KV18- 1X24M 144M QDR II+ Prototype Die -55°C to 125°C QML-V Production 200 144 Mbit 5962R1821501VXF 144M QDR II+ x36 BURST of 2 DLAM QML V -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT2644KV18- 250GCMB 144M QDR II+ x36 BURST of 2 Prototype -55°C to 125°C Prototype Production 144 Mbit 5962R1821502VXF 144M QDR II+ x36 BURST of 4 DLAM QML V -55°C to 125°C QML-V Production 200 >120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT2645KV18- 250GCMB 144M QDR II+ x36 BURST of 4 Prototype -55°C to 125°C Prototype Production 144 Mbit CYPT1642KV18- 250GCMB 144M QDR II+ x18 BURST of 2 Prototype w/o ODT -55°C to 125°C Prototype Production 144 Mbit 5962R1821403VXF 144M QDR II+ x18 BURST of 2 DLAM QML V w/o ODT -55°C to 125°C QML-V Production 200 >120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit 5962R1821404VXF 144M QDR II+ x18 BURST of 4 DLAM QML V w/o ODT -55°C to 125°C QML-V Production 200 >120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT1643KV18- 250GCMB 144M QDR II+ x18 BURST of 4 Prototype w/o ODT -55°C to 125°C Prototype Production 6 QDR® II+ SRAM Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/ dev.dy] Geo sync-solar min PD [Rad(Si)/s] 144 Mbit 5962R1821503VXF 144M QDR II+ x36 BURST of 2 DLAM QML V w/o ODT -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT1644KV18- 250GCMB 144M QDR II+ x36 BURST of 2 Prototype w/o ODT -55°C to 125°C Prototype Production 144 Mbit 5962R1821504VXF 144M QDR II+ x36 BURST of 4 DLAM QML V w/o ODT -55°C to 125°C QML-V Production 200 > 120 (120°C) < 3.34e-7 Immune 120 LET > 1e9 144 Mbit CYPT1645KV18- 250GCMB 144M QDR II+ x36 BURST of 4 Prototype w/o ODT -55°C to 125°C Prototype Production Fast async SRAM Our asynchronous SRAMs provide high-performance buffer support for space FPGA payload processing applications. Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/ dev.dy] Geo sync-solar min PD [Rad(Si)/s] 4 Mbit 5962F1123501VXC 4M Fast Asynchronous SRAM x8 DLAM QML V -55°C to 125°C QML-V Production 300 > 120 (125°C) < 5.0e-8 Immune 120 LET > 2e9 4 Mbit CYPT1049DV33- 12FZMB 4M Fast Asynchronous SRAM x8 Prototype -55°C to 125°C Prototype Production 4 Mbit CYRS1049DV33- 1X18M 4M Fast Asynchronous SRAM DLAM QML V Die -55°C to 125°C QML-V Production 300 > 120 (125°C) < 5.0e-8 Immune 120 LET > 2e9 4 Mbit CYPT1049DV33- 1X18M 4M Fast Asynchronous SRAM Prototype Die -55°C to 125°C Prototype Production 16 Mbit 5962R2020202VYC 16 Fast Asynchronous SRAM x8 DLAM QML V -55°C to 125°C QML-V Production 200 > 60 (95°C) < 3e-12 > 80 LET > 1e9 16 Mbit CYPT1069G30- 10FZMB 16 Fast Asynchronous SRAM x8 Prototype -55°C to 125°C Prototype Production 16 Mbit 5962R2020201VXC 16 Fast Asynchronous SRAM x16 DLAM QML V -55°C to 125°C QML-V Production 200 > 60 (95°C) < 3e-12 > 80 LET > 1e9 16 Mbit CYPT1061G30- 10GGMB 16 Fast Asynchronous SRAM x16 Prototype -55°C to 125°C Prototype Production F-RAM Our rad hard F-RAMs are well suited for data logging and calibration data storage for telemetry, command and control and payload applications, and boot code storage for microcontrollers and ASICs. Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/dev.dy] Geo sync-solar min PD [Rad(Si)/s] 1 Mbit CYPT15B101N- GGMB 1M FRAM Parallel Prototype -55°C to 125°C Prototype Production 1 Mbit 5962R231302VXC 1M FRAM Parallel DLAM QML-V -55°C to 125°C QML-V Production 150 > 96 (115°C) Immune < 5.3e-5 (active, standby) Immune (sleep) > 1e11 (static) 2 Mbit CYPT15B102N- GGMB 2M FRAM Parallel Prototype -55°C to 125°C Prototype Production 2 Mbit 5962R231301VXC 2M FRAM Parallel DLAM QML-V -55°C to 125°C QML-V Production 150 > 96 (115°C) Immune < 5.3e-5 (active, standby) Immune (sleep) > 1e11 (static) 2 Mbit CYPT15B102Q- GGMB 2M FRAM Serial Prototype -55°C to 125°C Prototype Production 2 Mbit CYRS15B102Q- 1X11I 2M FRAM Serial QML-V Die Industrial QML-V Production 150 > 114 (115°C) Immune < 1.34e-4 (active/ standby) <5.88e-8 (sleep) > 1e11 (static) 2 Mbit 5962R1821601VXC 2M FRAM Serial DLAM QML-V -55°C to 125°C QML-V Production 150 > 114 (115°C) Immune < 1.34e-4 (active/ standby) <5.88e-8 (sleep) > 1e11 (static) 7 RadTol NOR Flash Our rad tolerant QSPI NOR Flash family offers reliability, flexibility, and performance well beyond ordinary serial flash devices and are ideal for systems with limited space, signal connections, and power. Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/ dev.dy] Geo sync-solar min PD [Rad(Si)/s] 256 Mbit CYRS16B256- 133FZMB 256M Serial NOR Flash QSPI -55°C to 125°C QML-V Equivalent Production 30 /125 biased/ unbiased > 60 (85°C) < 1e-16 Immune 60 LET TBD 256 Mbit CYPT16B256- 133FZMB 256M Serial NOR Flash QSPI -55°C to 125°C Prototype Production 512 Mbit CYRS16B512- 133FZMB 512M Serial NOR Flash Dual QSPI -55°C to 125°C QML-V Equivalent Production 30 /125 biased/ unbiased > 60 (85°C) < 1e-16 Immune 60 LET TBD 512 Mbit CYPT16B512- 133FZMB 512M Serial NOR Flash Dual QSPI -55°C to 125°C Prototype Production Rad hard NOR Flash Our rad hard QSPI NOR Flash is ideal for space FPGA boot configuration and FPGA data storage for compute-intensive processing where flexibility and high performance have become stringent requirements. Density Part number Description Operating temp range Qual level Product status TID rating [krad] SEL [LET] SEU [err/ bit.dy] Geo sync-solar min SEFI [err/ dev.dy] Geo sync-solar min PD [Rad(Si)/s] 512 Mbit CYRS17B512- 133UZMB 512M Serial NOR Flash QSPI, 68-pin CQFP -55°C to 125°C QML-V Production 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 512 Mbit 5962F2122202VYC 512M Serial NOR Flash QSPI 68-pin CQFP -55°C to 125°C QML-V Production 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 512 Mbit CYPT17B512- 133UZMB 512M Serial NOR Flash QSPI, 68-pin CQFP -55°C to 125°C PROTOTYPE Production 512 Mbit CYRS17B512- 133AZMB 512Mb Serial NOR Flash QSPI, 100-pin TQFP -55°C to 125°C QML-V Production 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 512 Mbit 5962F2122201PXE 512Mb Serial NOR Flash QSPI, 100-pin TQFP -55°C to 125°C QML-V Production 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 512 Mbit CYPT17B512- 133AZMB 512Mb Serial NOR Flash QSPI, 100-pin TQFP -55°C to 125°C PROTOTYPE Production 1 Gbit CYRS17B01G- 133UZMB -55°C to 125°C QML-V 2025 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 1 Gbit CYPT17B01G- 133UZMB -55°C to 125°C PROTOTYPE 2025 1 Gbit CYRS17B01G- 133AZMB 2025 300 > 80 (125°C) Immune <2.77e-5 > 6e10 (static) 1 Gbit CYPT17B01G- 133AZMB -55°C to 125°C PROTOTYPE 2025 1Gbit Serial NOR Flash QSPI, 68‑pin CQFP 1Gbit Serial NOR Flash QSPI, 68‑pin CQFP 1Gbit Serial NOR Flash QSPI, 100‑pin TQFP 1Gbit Serial NOR Flash QSPI, 100‑pin TQFP -55°C to 125°C QML-P Where to Buy Infineon distribution partners and sales offices: www.infineon.com/WhereToBuy Service Hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Germany 0800 951 951 951 (German/English) India 000 800 4402 951 (English) USA 1-866 951 9519 (English/German) Other countries 00* 800 951 951 951 (English/German) Direct access +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than “00” to access this international number, please visit www.infineon.com/service for your country! www.infineon.com/hirel Published by International Rectifier HiRel Products, Inc. An Infineon Technologies Company El Segundo, California 90245 USA © 2025 Infineon Technologies AG All rights reserved. Public Date: 01/2025 Please note! This Document is for information purposes only and any information given herein shall in no event be regarded as a warranty, guarantee or description of any functionality, conditions and/or quality of our products or any suitability for a particular purpose. With regard to the technical specifications of our products, we kindly ask you to refer to the relevant product data sheets provided by us. Our customers and their technical departments are required to evaluate the suitability of our products for the intended application. We reserve the right to change this document and/or the information given herein at any time. Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in ques- tion, please contact your nearest Infineon Technologies office. Infineon Technologies Components may only be used in life-support devices or systems with the expressed written ap- proval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-sup- port device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sus- tain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.