Fast Delivery DigiKey customers in the United States can select from a range of delivery options, including Ground shipping at $6.99 and 2-Day at $12.99 Payment Types Payment in Advance by Wire Transfer Marketplace Product More Products From Fully Authorized Partners Average Time to Ship 1-3 Days. Please see product page, cart, and checkout for actual ship speed. Extra Ship Charges May Apply VideoLibrary MasterGan 1,2 | First Look Video STMiroelectronics’ MasterGaN1, 2 and 4 are high power density half-bridge system-in-package devices that feature two 650 Volt GaN High-Electron-Mobility Transistors as well as the half-bridge gate driver to operate them. The MasterGaN1 is the first 600 V half-bridge driver GaN HEMT system in package in the world, and the MasterGaN2 provides designers with additional versatility by implementing an asymmetrical half-bridge configuration ideal for soft-switching and active rectification converter topologies. This new asymmetric configuration provides increased efficiency and additional size and weight savings in topologies such as active clamp flyback. GaN solutions already save on size, weight, and power loss compared to ordinary silicon devices, but the inclusion of the drivers within the same package and the innovations STMicroelectronics has packed into their MasterGaN products can enable the products they’re used in to be up to 80% smaller, 70% lighter, and charge 3 times faster than competing silicon-based solutions. Before the MasterGaN, in order to implement a GaN transistor, the designer would have to match the perfect driver to it in order to make it work, but all of that trial, error, and wasted space has been condensed into one package for easy implementation. The MasterGaN1/2 and 4 are housed in 9 by 9 mm packages that are only 1 mm tall and have a temperature range of negative 40°C to positive 125°C. Their inputs are compatible with logic signals from 3.3 V to 15 V, giving them the versatility to be included inside any fast charger or power adapter. The MasterGaN1 has an on resistance (or RDSon) of 150 mΩ, and a max current of 10A, while the MasterGaN2/4 have an RDSon of 225 mΩ and max current of 6.5 A on the high side, and the MasterGaN2 has an RDSon of 150 mΩ on the low side. They also have UVLO protection and a dedicated safety shutdown pin. 8/9/2021 9:20:28 PM 238 - Immediate 179 - Immediate EVLMG1-250WLLC DC/DC Resonant Converter STMicroelectronics' EVLMG1-250WLLC is a resonant LLC converter dedicated to industrial applications where minimum size and high efficiency are required. MasterGaN Series High-Voltage Half-Bridge Gate Drivers with Embedded GaN FETs STMicroelectronics' MASTERGAN1 is the first 600 V half-bridge driver with a GaN HEMT SiP in the world and the first element of the MASTERGAN platform. Related Articles and Blogs Wide Bandgap Semiconductors Drive Efficiency in Datacenters Since datacenters have huge energy requirements, power solutions that can reduce power losses, boost efficiency, and enhance thermal control are required. Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation. Co-Browse By using the Co-Browse feature, you are agreeing to allow a support representative from DigiKey to view your browser remotely. When the Co-Browse window opens, give the session ID that is located in the toolbar to the representative. DigiKey respects your right to privacy. For more information please see our Privacy Notice and Cookie Notice . Thank you! Keep an eye on your inbox for news and updates from DigiKey! Please enter an email address I agree to receive marketing emails from DigiKey. I understand that I can withdraw consent at any time. Please review our Privacy Notice . Please accept the checkbox Subscribe Information