Announcements ALERT! Community is fighting spam attacks at present. Read updates here. RIC70115: Industryâs first rad hard GaN-based gate.. RIC70115: Industryâs first rad hard GaN-based gate driver capable of high and low-side operation RIC70115: Industryâs first rad hard GaN-based gate driver capable of high and low-side operation Introducing RIC70115 from Infineon IR HiRel, the industryâs first radiation hardened (rad hard) GaN-based gate driver that supports both high-side and low-side configurations. Our newest gate driver is built for high reliability applications with powerful gate drive capabilities for extreme environments. This deviceâs wide voltage range enables operation from multiple supply rails and enhances tolerance to radiation-induced transients, ensuring performance throughout mission lifespan. Continue reading and follow along with our product brief to learn more about the latest in rad hard space technology. Radiation hardened by design Unlike consumer applications, space-grade electronics operate in a heavy ion environment, where a charged particle can physically alter materials and permanently deteriorate the electrical characteristics and performance of a device over time. These effects put a missionâs life at risk, underscoring the need for reliable electronics in harsh environments. What makes the RIC70115 stand out is that it is rad hard by design, providing a level of assurance and reliability optimal for space applications. Our device is inherently resistant to extreme radiation effects, reducing the need for radiation damage mitigation compared to devices that are rad hard through testing. Top radiation specs include: Total ionizing dose (TID) rated to 100 krad(Si) Single event latch-up (SEL), Single event burnout (SEB), and Single event gate rupture (SEGR) immune up to Linear energy transfer (LET) of 81.9 MeV·cm2/mg Single event transient (SET) characterized to LET of 81.9 MeV·cm2/mg Each wafer is tested per MIL-STD-883, Method 1019, test condition A: âIonizing radiation (Total Dose) test Procedure,â to ensure radiation hardness. The device is planned for electrical screening and qualification to MIL-PRF-38535, Class V, with DLA qualification pending. Open our data sheet for a closer look at test protocols and results. Key features and benefits RIC70115 features a wide supply voltage range of 4.75 V to 15 V with a drive voltage of 4.8 V. The device maintains a stable driver voltage with its integrated low dropout (LDO) regulator, ensuring safe operation regardless of bias voltage and allows for additional flexibility in power supply design. The dedicated Miller Clamp pin prevents induced false turn-on, and the truly differential input (TDI) logic improves system stability, delivering exceptional noise immunity and reliable performance. The device is available in a hermetically sealed 16-pin LCC package and operates across the full military ambient temperature range of -55°C to 125°C. Potential applications The robust switching capabilities of the RIC70115 make it ideal for high-speed electronic payloads and advanced FPGA interfaces. The flexible power architecture ensures optimal efficiency and reliability for all power designs and electronic systems. RIC70115 can be used for satellite bus and payload applications, such as within power conditioning units, power distribution units, and DC-DC converters. RIC70115 âs robust gate drive strength and fast propagation delay allow for high-frequency, low loss switching. The device is intended to drive GaN HEMTs, such as IR HiRelâs 100 V rad hard GaN transistor , available with JANS qualification. RIC70115 is compatible with logic level Si FETs, like Infineon IR HiRelâs rad hard R8 FET family . Test and evaluation options To assist engineers in determining if the RIC70115 is the best part for their application, Infineon offers a fully populated test and evaluation board (RIC70115EVAL1). This board is available and ready for immediate ordering. The RIC70115 evaluation platform is available now. Conclusion The RIC70115 offers improved versatility and reliability, with advanced integration and on-chip functionality. Between its rad hard reliability and GaN compatibility, this device delivers the performance, flexibility, and robustness that todayâs space missions require. Download our product brief and data sheet to learn more. Copy Link 1 Comment You must be a registered user to add a comment. If you've already registered, sign in. Otherwise, register and sign in.
