PRODUCT BRIEF www.infineon.com Radiation tolerant N-channel Power MOSFETs A family of radiation tolerant N-channel MOSFETs in plastic packages for LEO missions and (mega) constellations Product features ‒ Optimized for LEO missions and constellations ‒ Radiation tolerant ‒ LET of 46 MeV∙cm²/mg ‒ TID of 30 krad(Si) ‒ Automotive qualified according to AEC-Q101 standard ‒ Two voltage classes: 60 V and 150 V VDS (max) ‒ RDS(on) (max) @25°C from 15 mΩ to 60 mΩ ‒ Surface mount and thru hole packages available Target applications ‒ Ideally suited for all power related applications including ‒ Power condition unit ‒ Power distribution unit ‒ DC-DC converters The Enhanced Commercial Power MOSFETs in plastic packages are designed to meet the requirements for short term, 2-5 year, LEO missions and constellations. The products are single event effect (SEE) tolerant and specified with a LET of 46 MeV∙cm²/mg. They can be used in space applications without further radiation tests, like proton tests. They also withstand a Total Ionizing Dose of 30 krad(Si), which supports the targeted mission lifetime of 2-5 years. The product family offers four different N-channel MOSFETs based on the unique Infineon CoolMOS™ super-junction technology. This makes them ideal for fast switching applications. There are two voltage options, 60 V and 150 V, supporting the most common bus voltages of 28 V and 54 V used in LEO satellites. The RDS(on) values range from 15 mΩ to 60 mΩ. There are two plastic package options available, the surface mount TO-263 and the through hole TO-247. The TO-263 supports easy assembly and re-flow soldering, while the TO-247 can be used for an optimized cooling concept for higher currents. Both package types have leads plated with matte tin to reduce whisker build. The radiation tolerant N-channel MOSFETs are qualified according to the automotive standard AEC-Q101 with an operating temperature from -40°C to +125°C. Key features ‒ No component level testing at customer side, as SEE and TID levels are specified on product level ‒ Commercially attractive due to high volume assembly lines Key benefits TO-247 package TO-263 package PRODUCT BRIEF Radiation tolerant N-channel Power MOSFETs A family of radiation tolerant N-channel MOSFETs in plastic packages for LEO missions and (mega) constellations Space power architecture Product table Product name Package Channel BVDSS (V) QG (nC) RDS(on) @25°C IDC @25°C Idpuls (A) Power dissipation (W) Gate voltage Die size BUP06CN015E-01 TO-247 N 60 75 15 45 200 390 +/- 20 6 BUP06CN035L-01 TO-263 N 25 35 35 100 150 +/- 20 3 BUP15CN027E-01 TO-247 N 150 75 27 45 180 390 +/- 20 6 BUP15CN060L-01 TO-263 N 25.5 60 23 93 150 +/- 20 3 www.infineon.com/hirel Published by Infineon Technologies AG Am Campeon 1-15, 85579 Neubiberg, Germany © 2023 Infineon Technologies AG All rights reserved. Public Document number: B119-I1426-V1-7600-NA-EC-P Date: 10/ 2023 Please note! This Docume nt is for information purpose s only and any information give n he re in shall in no e ve nt be re garde d as a warranty, guarante e or de scription of any functionality, conditions and/or quality of our products or any suitability for a particular purpose. With regard to the technical specifications of our products, we kindly ask you to refer to the relevant product data sheets provided by us. Our customers and their technical de partme nts are re quire d to e valuate the suitability of our products for the intended application. We re se rve the right to change this docume nt and/or the information given herein at any time. Additional information For furthe r information on te chnologie s, our products, the application of our products, de live ry te rms and conditions and/or prices, pleasecontact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to te chnical re quire me nts, our products may contain dange rous substance s. For information on the type s in que s- tion, please contact your nearest Infineon Technologies office. Infine on Te chnologie s Compone nts may only be use d in life-support devices or systems with the expressed written ap- proval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-sup - port device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sus- tain and/or prote ct human life . If the y fail, it is reasonable to assume that the he alth of the use r or othe r pe rsons may be endangered.