www.infineon.com/new-space NewSpace rad tolerant memories For Low Earth Orbit 2 F-RAMs The low-power, small-footprint rad tolerant F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy-efficiency. Our devices enable the capture and preservation of critical data when power is interrupted. The NewSpace rad tolerant F-RAMs come in two options. The first has a density of 2 Mb, with an SPI interface in an 8-pin SOIC package. The second also has a density of 2 Mb, but it offers a parallel interface in a 44-pin TSOP II package. Both forms of F-RAM have a MIL-temp range of -55°C to 125°C with a TID rating of 50 krad(Si). As Low Earth Orbit (LEO) applications and constellations have become increasingly popular, Infineon’s radiation tolerant solutions are designed with size, weight, power, and cost (SWaP-c) considerations in mind, making them well-suited for NewSpace applications. Infineon has decades of experience in both automotive and space electronics, which has resulted in a portfolio of rad tolerant components to support LEO satellite bus platform and payload operations. Infineon’s NewSpace memory solutions offer the right balance between cost, reliability, and radiation performance. Included in this radiation tolerant family are F-RAM, Pseudo SRAM, and NOR Flash devices designed to meet the requirements of shorter mission life, high redundancy, mega-constellations. NOR Flash Infineon offers two rad tolerant NOR Flash devices, catering to the needs of LEO space missions. The first device has a density of 256 Mb, featuring a QSPI interface and a 16-pin SOIC package. It operates within a temperature range of -40°C to 125°C and boasts a TID rating of 30 krad(Si). The second device has a higher density of 512 Mbit, packaged in a 100-TQFP package, and operates within a wider temperature range of -55°C to 125°C, with a TID rating of 100 krad(Si). Both devices are ideal for various applications, including FPGA configuration image storage and standalone boot code for microprocessors in LEO payload applications. NewSpace memory solutions 3 Parts list Product Density Interface Part Number Description Package Temp Range TID Rating F-RAM 2 Mbit SPI (x1) CYEL15B102Q-SXM 2 Mbit, SPI, F-RAM 8-pin SOIC -55°C to 125°C 50 krad(Si) 2 Mbit Parallel (128K x 16) CYEL15B102N-SZ60XM 2 Mbit, parallel, F-RAM 44-pin TSOP II -55°C to 125°C 50 krad(Si) 256 Kbit Serial I2C CYEL15B256J-SXE 256 Kbit, I2C, F-RAM 8-pin SOIC -40°C to 125°C 50 krad(Si) NOR Flash 256 Mbit QSPI (x4) CYEL16B256-133SXE 256 Mbit, QSPI, NOR Flash 16-pin SOIC -40°C to 125°C 30 krad(Si) 512 Mbit QSPI (x4) CYEL17B512-133AZM 512 Mbit, QSPI, NOR Flash 100-pin TQFP -55°C to 125°C 100 krad(Si) 1 Gbit QSPI CYEL17B01G-133AZM 1 Gbit, QSPI, rad tol NOR Flash 100-pin TQFP -55°C to 125°C 100 krad(Si) Pseudo SRAM (pSRAM) 256 Mbit Serial (x8) CYEL18V2562-200BKXE 256 Mbit, 1.8 V, HYPERBUS pSRAM 24-ball FBGA -40°C to 125°C 100 krad(Si) 512 Mbit Serial (x8) CYEL18V5122-200BKXE 512 Mbit, 1.8 V, HYPERBUS pSRAM 24-ball FBGA -40°C to 125°C 100 krad(Si) 256 Mbit Serial (x8) CYEL18V2563-200BKXE 256 Mbit, 1.8 V, XSPI pSRAM 24-ball FBGA -40°C to 125°C 100 krad(Si) 512 Mbit Serial (x8) CYEL18V5123-200BKXE 512 Mbit, 1.8 V, xSPI pSRAM 24-ball FBGA -40°C to 125°C 100 krad(Si) Pseudo SRAM (pSRAM) Infineon’s rad tolerant Pseudostatic RAM (pSRAM) supports densities of 256 Mbit and 512 Mbit and offered with a HYPERBUS™ or Octal SPI (xSPI) interface option in a 24-ball FBGA package. Its temperature range starts at -40°C to 125°C, with a TID rating of 100 krad(Si). An optimal expansion memory choice, these pSRAM memories externally act like a serial SRAM with reliable DRAM memory as a back- end storage element. The device’s hybrid sleep mode and partial-array-refresh help conserve energy. A high throughput up to 3.2 Gbps maximizes system performance by enabling a high read/write bandwidth. Our memories' low pin-count simplifies overall design and reduces system cost Key features – Optimized for LEO missions and constellations – F-RAM: TID of 50 krad(Si) – NOR Flash: TID of 30/100 krad(Si) – pSRAM: TID of 100 krad(Si) Radiation tolerant – F-RAM: -55°C to 125°C – NOR Flash: -40°C to 125°C/ -55°C to 125°C – pSRAm: -40°C to 125°C Key benefits Wide temperature range (°C) – Single lot date code – 100% electrical testing – Guranteed TID radiation performance High Reliability Where to Buy Infineon distribution partners and sales offices: www.infineon.com/WhereToBuy Service Hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Germany 0800 951 951 951 (German/English) China, mainland 4001 200 951 (Mandarin/English) India 000 800 4402 951 (English) USA 1-866 951 9519 (English/German) Other countries 00* 800 951 951 951 (English/German) Direct access +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than “00” to access this international number, please visit www.infineon.com/service for your country! Scan QR code and explore offering www.infineon.com/hirel Published by Infineon Technologies AG Am Campeon 1-15, 85579 Neubiberg Germany © 2024 Infineon Technologies AG. All rights reserved. Public Document number: B119-I1476-V2-7600-EU-EC Date: 12/ 2024 Please note! This Document is for information purposes only and any information given herein shall in no event be regarded as a warranty, guarantee or description of any functionality, conditions and/or quality of our products or any suitability for a particular purpose. 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