www.infineon.com/memory Infineon offers the highest performing memory for space applications QML-V qualified 144 Mbit and 72 Mbit SRAM memories The worldwide leader in SRAMs now offers high performance, radiation hardened memories for space applications. Infineon’s rad hard 144 Mbit and 72 Mbit QDR®-II+ synchronous SRAMs deliver radiation immunity high enough to withstand constant cosmic radiation bombardment in outer space. These memories are QML Class V certified, the most stringent industry standard, making them the most reliable memory chips on the market. Operating two independent DDR data ports at 250 MHz increases throughput by eliminating turnaround delay on common I/O devices. Infineon rad hard QDR®-II+ SRAMs are the highest throughput memory on the market, and are ideally suited for deployment in space-bound systems. Infineon enables computing in orbit and beyond Rad hard QDR®-II+ sync SRAMs are ideal for space applications, such as satellite-based networking and reconfigurable computing. Previous generation satellites relied on ASICs to perform key functions, which complicated update and servicing procedures. Newer FPGA based systems allow for remote re- configurability, and Infineon’s QDR®-II+ sync SRAMs plays a pivotal role in such systems. The rad hard sync SRAMs can act as a cache for FPGA systems requiring high performance for real-time mathematical operations. Our rad hard QDR®-II+ SRAMs boast an industry leading throughput of 36 Gbps on a single chip to enable high performance in extreme radiation environments. High radiation tolerance, coupled with standard error mitigation techniques, enable the most reliable space computing systems on the market. Industry leading radiation hardened SRAMs for extreme environments ‒ 144 Mbit and 72 Mbit densities ‒ x18 and x36 data bus width ‒ 2 and 4 word burst lengths ‒ 2 cycle read latency ‒ 250 MHz max frequency / 36 Gbps throughput ‒ 2 independent unidirectional data ports for concurrent r/w transactions ‒ Output impedance matching input (ZQ) matches the device outputs to system data bus impendance ‒ Memory core bit-interleaving to eliminate multi-bit soft errors ‒ 1.5 V to 1.8 V HSTL I/O signaling standards ‒ 1.7 V to 1.9 V operating voltage range ‒ -55°C to +125°C military temperature grade ‒ Controller RTL IP cores with embedded EDAC are available for Xilinx and Microchip FPGAs ‒ QML-V qualified Key features ‒ TID: 300 krad(Si) 72 Mbit; 200 krad(Si) 144 Mbit ‒ SEL: 120 MeV.cm2/mg @ 125°C ‒ SEU: < 1.34 e-7 err/bit.dy (geo sync-solar min) 72 Mbit; < 3.34 e-7 err/bit.dy (geo sync-solar min) 144 Mbit ‒ SEFI: Immune 120 LET Radiation performance www.infineon.com/memory Applications ‒ Radar (SAR, LiDAR, SWOT) ‒ Satellite based networking ‒ Satellite imaging ‒ Command and data handling (C&DH) ‒ Telemetry and tracking ‒ Attitude and orbit control (AOC) Block diagram Elevating mission-critical applications The QDR®-II+ SRAM architecture provides a low latency and random memory access capability needed for high performance applications such as external cache memories. Infineon’s QDR®-II+ Sync SRAM family provides the Random Transaction Rate (RTR) necessary to break system bottlenecks. Our state-of-the-art RADSTOP™ technology enables radiation hardening through best-in-class proprietary design and process hardening techniques. Products Density Part Number Description Operating Temp Qual Level TID [krad(Si)] SEL [LET] SEU [err/dev.day] SEFI [LET] PD [rad(Si)/s] 72 Mbit CYPT1542AV18-250GCMB 72M QDR II+ x18 BURST of 2 Prototype -55°C to 125°C Prototype — — — — — 5962F1120101VXA 72M QDR II+ x18 BURST of 2 DLAM QML V -55°C to 125°C QML-V 300 >120 (125°C) <1.34e-7 Immune 120 >2e9 CYPT1543AV18-250GCMB 72M QDR II+ x18 BURST of 4 Prototype -55°C to 125°C Prototype — — — — — 5962F1120102VXA 72M QDR II+ x18 BURST of 4 DLAM QML V -55°C to 125°C QML-V 300 >120 (125°C) <1.34e-7 Immune 120 >2e9 CYPT1543AV18-1X24M 72M QDR II+ Prototype DIE -55°C to 125°C Prototype — — — — — CYPT1544AV18-250GCMB 72M QDR II+ x36 BURST of 2 Prototype -55°C to 125°C Prototype — — — — — 5962F1120201VXA 72M QDR II+ x36 BURST of 2 DLAM QML V -55°C to 125°C QML-V 300 >120 (125°C) <1.34e-7 Immune 120 >2e9 CYPT1545AV18-250GCMB 72M QDR II+ x36 BURST of 4 Prototype -55°C to 125°C Prototype — — — — — 5962F1120202VXA 72M QDR II+ x36 BURST of 4 DLAM QML V -55°C to 125°C QML-V 300 >120 (125°C) <1.34e-7 Immune 120 >2e9 144 Mbit CYPT2642KV18-250GCMB 144M QDR II+ x18 BURST of 2 Prototype -55°C to 125°C Prototype — — — — — 5962R1821401VXF 144M QDR II+ x18 BURST of 2 DLAM QML V -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT2643KV18-250GCMB 144M QDR II+ x18 BURST of 4 Prototype -55°C to 125°C Prototype — — — — — 5962R1821402VXF 144M QDR II+ x18 BURST of 4 DLAM QML V -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT2643KV18-1X24M 144M QDR II+ Prototype DIE -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT2644KV18-250GCMB 144M QDR II+ x36 BURST of 2 Prototype -55°C to 125°C Prototype — — — — — 5962R1821501VXF 144M QDR II+ x36 BURST of 2 DLAM QML V -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT2645KV18-250GCMB 144M QDR II+ x36 BURST of 4 Prototype -55°C to 125°C Prototype — — — — — 5962R1821502VXF 144M QDR II+ x36 BURST of 4 DLAM QML V -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT1642KV18-250GCMB 144M QDR II+ x18 BURST of 2 Prototype w/o ODT -55°C to 125°C Prototype — — — — — 5962R1821403VXF 144M QDR II+ x18 BURST of 2 DLAM QML V w/o ODT -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT1643KV18-250GCMB 144M QDR II+ x18 BURST of 4 Prototype w/o ODT -55°C to 125°C Prototype — — — — — 5962R1821404VXF 144M QDR II+ x18 BURST of 4 DLAM QML V w/o ODT -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT1644KV18-250GCMB 144M QDR II+ x36 BURST of 2 Prototype w/o ODT -55°C to 125°C Prototype — — — — — 5962R1821503VXF 144M QDR II+ x36 BURST of 2 DLAM QML V w/o ODT -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 CYPT1645KV18-250GCMB 144M QDR II+ x36 BURST of 4 Prototype w/o ODT -55°C to 125°C Prototype — — — — — 5962R1821504VXF 144M QDR II+ x36 BURST of 4 DLAM QML V w/o ODT -55°C to 125°C QML-V 200 >120 (125°C) <3.34e-7 Immune 120 >1e9 www.infineon.com/hirel Published by International Rectifier HiRel Products, Inc. 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