Please read the Important Notice and Warnings at the end of this document www.infineon.com/irhirel page 1 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) PD-97998B Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) -100V, -24A, P-channel, R9 Superjunction Technology Features • Single event effect (SEE) hardened (up to LET of 91.2 MeV·cm2/mg) • Low RDS(on) • Rugged SOA • Improved Avalanche Energy • Simple drive requirements • Hermetically sealed • Ceramic package • Light weight • Surface mount • ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications • Power distribution • Latching current limiter • Motor drives • DC-DC converter Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 91.2 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA will allow for better performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package Screening Level TID Level IRHNKC9A97130 SMD-0.5e (Ceramic Lid) COTS 100 krad(Si) JANSR2N7660U3CE SMD-0.5e (Ceramic Lid) JANS 100 krad(Si) IRHNKC9A93130 SMD-0.5e (Ceramic Lid) COTS 300 krad(Si) JANSF2N7660U3CE SMD-0.5e (Ceramic Lid) JANS 300 krad(Si) SMD-0.5e (Ceramic Lid) Product Summary • BVDSS: -100V • ID : -24A • RDS(on),max : 72m • QGmax : 50nC • REF: MIL-PRF-19500/780 2 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Table of contents Table of contents Features ........................................................................................................................................ 1 Potential Applications ..................................................................................................................... 1 Product Validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Ordering Information ...................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Absolute Maximum Ratings ..................................................................................................... 3 2 Device Characteristics ............................................................................................................ 4 2.1 Electrical Characteristics (Pre-Irradiation) ............................................................................................. 4 2.2 Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) ....................................................... 5 2.3 Thermal Characteristics .......................................................................................................................... 5 2.4 Radiation Characteristics ........................................................................................................................ 5 2.4.1 Electrical Characteristics — Post Total Dose Irradiation .................................................................. 5 2.4.2 Single Event Effects — Safe Operating Area ...................................................................................... 6 3 Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7 4 Test Circuits (Pre-irradiation) ................................................................................................. 11 5 Package Outline .................................................................................................................... 12 Revision history............................................................................................................................. 13 3 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings (Pre-Irradiation) 1 Repetitive Rating; Pulse width limited by maximum junction temperature. 2 VDD = -100V, starting TJ = 25°C, L = 7.2mH, Peak IL = -15A, VGS = -20V 3 ISD -24A, di/dt -1050A/μs, VDD -100V, TJ 150°C Symbol Parameter Value Unit ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -24 A ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -15 A IDM @ TC = 25°C Pulsed Drain Current 1 -96 A PD @ TC = 25°C Maximum Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 2 810 mJ IAR Avalanche Current 1 -15 A EAR Repetitive Avalanche Energy 1 7.5 mJ dv/dt Peak Diode Reverse Recovery 3 -11 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C Lead Temperature 300 (for 5s) Weight 1.0 (Typical) g 4 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Device Characteristics 2 Device Characteristics 2.1 Electrical Characteristics (Pre-Irradiation) Table 3 Static and Dynamic Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient — 0.11 — V/°C Reference to 25°C, ID = -1.0mA RDS(on) Static Drain-to-Source On-State Resistance — — 72 m VGS = -12V, ID2 = -15A 1 VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS VGS, ID = -1mA VGS(th)/TJ Gate Threshold Voltage Coefficient — 5.6 — mV/°C Gfs Forward Transconductance 14 — — S VDS = -15V, ID2 = -15A 1 IDSS Zero Gate Voltage Drain Current — — -10 A VDS = -80V, VGS = 0V — — -25 VDS = -80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 nA VGS = -20V Gate-to-Source Leakage Reverse — — 100 VGS = 20V QG Total Gate Charge — — 50 nC ID1 = -24A VDS = -50V VGS = -12V QGS Gate-to-Source Charge — — 16 QGD Gate-to-Drain (‘Miller’) Charge — — 12 td(on) Turn-On Delay Time — — 18 ns ID1 = -24A ** VDD = -50V RG = 7.5 VGS = -12V tr Rise Time — — 48 td(off) Turn-Off Delay Time — — 74 tf Fall Time — — 39 Ls +LD Total Inductance — 4.0 nH Measured from center of Drain pad to center of Source pad Ciss Input Capacitance — 2465 — pF VGS = 0V VDS = -25V ƒ = 1.0MHz Coss Output Capacitance — 524 — Crss Reverse Transfer Capacitance — 14 — RG Gate Resistance — 5.6 — ƒ = 1.0MHz, open drain ** Switching speed maximum limits are based on manufacturing test equipment and capability. 1 Pulse width 300 μs; Duty Cycle 2% 5 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Device Characteristics 2.2 Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) Table 4 Source-Drain Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions IS Continuous Source Current (Body Diode) — — -24 A ISM Pulsed Source Current (Body Diode) 1 — — -196 A VSD Diode Forward Voltage — — -1.3 V TJ = 25°C, IS = -24A, VGS = 0V 2 trr Reverse Recovery Time — 73 110 ns TJ = 25°C, IF = -24A, VDD ≤ -25V di/dt = -100A/μsQrr Reverse Recovery Charge — 258 — nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2.3 Thermal Characteristics Table 5 Thermal Resistance Symbol Parameter Min. Typ. Max. Unit RJC Junction-to-Case — — 1.67 °C/W 2.4 Radiation Characteristics IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 2.4.1 Electrical Characteristics — Post Total Dose Irradiation Table 6 Electrical Characteristics @ TJ = 25°C, Post Total Dose Irradiation 3, 4 Symbol Parameter Up to 300 krad (Si)5 Unit Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage -100 — V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS VGS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward — -100 nA VGS = -20V Gate-to-Source Leakage Reverse — 100 VGS = 20V IDSS Zero Gate Voltage Drain Current — -10 μA VDS = -80V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) 2 — 73 m VGS = -12V, ID2 = -15A RDS(on) Static Drain-to-Source On-State Resistance (SMD-0.5e) 2 — 72 m VGS = -12V, ID2 = -15A VSD Diode Forward Voltage — -1.3 V VGS = 0V, IF = -24A 1 Repetitive Rating; Pulse width limited by maximum junction temperature. 2 Pulse width 300 μs; Duty Cycle 2% 3 Total Dose Irradiation with VGS Bias. VGS = -12V applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. 4 Total Dose Irradiation with VDS Bias. VDS = -80V applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 5 Part numbers IRHNKC9A97130 (JANSR2N7660U3CE) and IRHNKC9A93130 (JANSF2N7660U3CE) 6 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Device Characteristics 2.4.2 Single Event Effects — Safe Operating Area IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. 1 and Table 7. Table 7 Typical Single Event Effects Safe Operating Area LET (MeV·cm2/mg) Energy (MeV) Range (μm) VDS (V) VGS = 0V VGS = 1V VGS = 5V VGS = 10V 38.5 ± 2% 336.5 ± 5% 41.4 ± 5% -100 -100 -100 -100 61.3 ± 2% 623.5 ± 5% 51.5 ± 5% -100 -100 -100 -— 91.2 ± 2% 1322.5 ± 5% 72.9 ± 5% -100 -100 — — Figure 1 Typical Single Event Effect, Safe Operating Area-120 -100 -80 -60 -40 -20 0 0 2 4 6 8 10 Bias VDS (V) Bias VGS (V) LET = 38.5 ± 2% LET = 61.3 ± 2% LET = 91.2 ± 2% 7 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Electrical Characteristics Curves (Pre-irradiation) 3 Electrical Characteristics Curves (Pre-irradiation) Figure 2 Typical Output Characteristics Figure 3 Typical Output Characteristics Figure 4 Typical Transfer Characteristics Figure 5 Normalized On-Resistance Vs. Temperature0.1 1 10 100 1000 0.1 1 10 100 -ID, Drain-to-Source Current (A) -VDS, Drain-to-Source Voltage (V) 20μs PULSE WIDTH, Tj = 25 C VGS TOP -15V -12V -10V -7.0V -6.0V -5.0V -4.5V BOTTOM -4.0V0.1 1 10 100 1000 0.1 1 10 100 -ID, Drain-to-Source Current (A) -VDS, Drain-to-Source Voltage (V) 20μs PULSE WIDTH, Tj = 150 C VGS TOP -15V -12V -10V -7.0V -6.0V -5.0V -4.5V BOTTOM -4.0V0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ , Junction Temperature ( C) ID = -24A0.1 1 10 100 1000 0 2 4 6 8 10 12 -ID, Drain-to-Source Current (A) -VGS Gate-to-Source Voltage (V) VDS = -25V 20μs PULSE TJ = 25 C TJ = 150 C 8 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Electrical Characteristics Curves (Pre-irradiation) Figure 6 Typical On-Resistance Vs Gate Voltage Figure 7 Typical On-Resistance Vs Drain Current Figure 8 Typical Drain-to-Source Breakdown Voltage Vs. Temperature Figure 9 Typical Threshold Voltage Vs. Temperature20 40 60 80 100 120 140 160 180 200 2 4 6 8 10 12 14 16 18 20 RDS(on), Drain-to -Source On Resistance (m ) -VGS Gate-to-Source Voltage (V) ID = -15A TJ = 150 C TJ = 25 C0 35 70 105 140 175 210 245 280 0 12 24 36 48 60 72 84 96 108 RDS(on), Drain-to -Source On Resistance (m ) -ID, Drain Current (A) VGS = -12V TJ = 25 C TJ = 150 C120 122 124 126 128 130 132 134 136 138 140 142 144 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V(BR)DSS, Drain-to-Source Breakdown Voltage (V) TJ , Junction Temperature ( C) ID = -1mA0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) VDS ≥ VGS ID = -50uA ID = -250uA ID = -1.0mA ID = -6.0mA ID = -150mA 9 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Electrical Characteristics Curves (Pre-irradiation) Figure 10 Typical Capacitance Vs. Drain-to-Source Voltage Figure 11 Gate-to-Source Voltage Vs. Typical Gate Charge Figure 12 Typical Source-Drain Current Vs. Diode Forward Voltage Figure 13 Maximum Drain Current Vs. Case Temperature0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 1 10 100 C, Capacitance (pF) -VDS, Drain-to-Source Voltage (V) Ciss Coss Crss VGS = 0V, f = 1.0 Mhz Ciss = C gs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 60 -VGS, Gate-to-Source Voltage (V) QG, Total Gate Charge (nC) ID = -24A VDS = -80V VDS = -50V VDS = -20V FOR TEST CIRCUIT SEE FIGURE 180.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -ISD, Reverse Drain Current (A) -VSD Source-to-Drain Voltage (V) VGS = 0V TJ = 25 C TJ = 150 C0 2 4 6 8 10 12 14 16 18 20 22 24 26 25 50 75 100 125 150 -ID, Drain Current (A) TC, CASE TEMPERATURE ( C) 10 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Electrical Characteristics Curves (Pre-irradiation) Figure 14 Maximum Safe Operating Area Figure 15 Maximum Safe Operating Area Figure 16 Maximum Avalanche Energy Vs. Junction Temperature Figure 17 Maximum Effective Transient Thermal Impedance, Junction-to-Case0 200 400 600 800 1000 1200 25 50 75 100 125 150 EAS , Single Pulse Avalanche Energy (mJ) Starting TJ , Junction Temperature ( C) ID TOP -11A -15A BOTTOM -24A0.1 1 10 100 1 10 100 -ID, Drain Current (A) -VDS, Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 10ms, TC = 25 C Single Pulse 20ms, TC = 25 C 10ms, TC = 85 C0.1 1 10 100 1 10 100 -ID, Drain Current (A) -VDS, Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 100s 1ms 10ms DC TC = 25 C TJ = 150 C Single Pulse0.001 0.01 0.1 1 10 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Thermal Response ( Z thJC )RESISTANCE t1 , Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE (THERMAL RESPONSE ) 0.01 0.02 0.1 0.2 0.05 D = 0.5 11 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Test Circuits (Pre-irradiation) 4 Test Circuits (Pre-irradiation) Figure 18 Gate Charge Test Circuit Figure 19 Gate Charge Waveform Figure 20 Unclamped Inductive Test Circuit Figure 21 Unclamped Inductive Waveform Figure 22 Switching Time Test Circuit Figure 23 Switching Time Waveforms 12 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Package Outline 5 Package Outline Note: For the most updated package outline, please see the website: SMD-0.5e (Ceramic Lid) 13 of 14 2023-07-26 IRHNKC9A97130 (JANSR2N7660U3CE) Radiation Hardened Power MOSFET (SMD-0.5e) Revision history Revision history Document version Date of release Description of changes 10/24/2022 Preliminary datasheet with PPD number (PPD-97998) Rev A 12/19/2022 Final datasheet with PD number (PD-97998A) Rev B 07/26/2023 Updated based on ECN-1120_09644 Edition 2023-07-26 Published by International Rectifier HiRel Products, Inc. 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