Please read the Important Notice and Warnings at the end of this document www.infineon.com/irhirel page 1 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) PD-97894C Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) 60V, 100A, N-channel, R9 Superjunction Technology Features • Single event effect (SEE) hardened (up to LET of 90 MeV·cm2/mg) • Low RDS(on) • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Ceramic package • Direct-to-PCB attach • Light weight • ESD rating: class 3B per MIL-STD-750, Method 1020 Potential Applications • DC-DC converter • Motor drives Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV·cm2/mg. Their combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converters or motor drives. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package Screening Level TID Level IRHNS9A7064 SupIR-SMD™ COTS 100krad(Si) JANSR2N7652U2A SupIR-SMD™ JANS 100krad(Si) IRHNS9A3064 SupIR-SMD™ COTS 300krad(Si) JANSF2N7652U2A SupIR-SMD™ JANS 300krad(Si) SupIR-SMD™ Product Summary • BVDSS: 60V • ID: 100A* • RDS (on), max: 4.0m • QGmax: 194nC • REF: MIL-PRF-19500/777 2 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Table of contents Table of contents Features ........................................................................................................................................ 1 Potential Applications ..................................................................................................................... 1 Product Validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Ordering Information ...................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Absolute Maximum Ratings ..................................................................................................... 3 2 Device Characteristics ............................................................................................................ 4 2.1 Electrical Characteristics (Pre-Irradiation) ............................................................................................. 4 2.2 Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) ....................................................... 5 2.3 Thermal Characteristics .......................................................................................................................... 5 2.4 Radiation Characteristics ........................................................................................................................ 5 2.4.1 Electrical Characteristics - Post Total Dose Irradiation .................................................................... 5 2.4.2 Single Event Effects – Safe Operating Area ....................................................................................... 6 3 Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7 4 Test Circuits (Pre-irradiation) ................................................................................................. 11 5 Package Outline .................................................................................................................... 12 Revision history............................................................................................................................. 13 3 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings (Pre-Irradiation) 1 Repetitive Rating; Pulse width limited by maximum junction temperature. 2 VDD = 60V, starting TJ = 25°C, L = 0.8mH, Peak IL = 100A, VGS = 20V 3 ISD 100A, di/dt 1155A/μs, VDD 60V, TJ 150°C Symbol Parameter Value Unit ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current 100* A ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current 100* A IDM @ TC = 25°C Pulsed Drain Current 1 400 A PD @ TC = 25°C Maximum Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 2 4000 mJ IAR Avalanche Current 1 100 A EAR Repetitive Avalanche Energy 1 25 mJ dv/dt Peak Diode Reverse Recovery 3 4.8 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C Lead Temperature 300 (for 5s) Weight 3.3 (Typical) g * Current is limited by package 4 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Device Characteristics 2 Device Characteristics 2.1 Electrical Characteristics (Pre-Irradiation) Table 3 Static and Dynamic Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient — 0.06 — V/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-State Resistance — — 4.0 m VGS = 12V, ID2 = 100A 1 VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS ≥ VGS, ID = 6.0mA VGS(th)/TJ Gate Threshold Voltage Coefficient — -7.2 — mV/°C Gfs Forward Transconductance 50 — — S VDS = 15V, ID2 = 100A 1 IDSS Zero Gate Voltage Drain Current — — 1.0 A VDS = 48V, VGS = 0V — — 25 VDS = 48V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 nA VGS = 20V Gate-to-Source Leakage Reverse — — -100 VGS = -20V QG Total Gate Charge — — 194 nC ID1 = 100A VDS = 30V VGS = 12V QGS Gate-to-Source Charge — — 50 QGD Gate-to-Drain (‘Miller’) Charge — — 69 td(on) Turn-On Delay Time — — 30 ns ID1 = 100A ** VDD = 30V RG = 2.35 VGS = 12V tr Rise Time — — 180 td(off) Turn-Off Delay Time — — 113 tf Fall Time — — 66 Ls +LD Total Inductance — 12 — nH Measured from center of Drain pad to center of Source pad Ciss Input Capacitance — 9100 — pF VGS = 0V VDS = 25V ƒ = 1.0MHz Coss Output Capacitance — 3700 — Crss Reverse Transfer Capacitance — 30 — RG Gate Resistance — 1.5 — ƒ = 1.0MHz, open drain ** Switching speed maximum limits are based on manufacturing test equipment and capability. 1 Pulse width 300 μs; Duty Cycle 2% 5 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Device Characteristics 2.2 Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) Table 4 Source-Drain Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions IS Continuous Source Current (Body Diode) — — 100 A ISM Pulsed Source Current (Body Diode) 1 — — 400 A VSD Diode Forward Voltage — — 1.2 V TJ = 25°C, IS = 100A, VGS = 0V 2 trr Reverse Recovery Time — 130 165 ns TJ = 25°C, IF = 100A, VDD ≤ 25V di/dt = 100A/μs 2 Qrr Reverse Recovery Charge — 775 — nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2.3 Thermal Characteristics Table 5 Thermal Resistance Symbol Parameter Min. Typ. Max. Unit RJC Junction-to-Case — — 0.50 °C/W RJ-PCB Junction-to-PC Board (Soldered to 2” sq.inch copper clad board) — 1.6 — 2.4 Radiation Characteristics IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 2.4.1 Electrical Characteristics - Post Total Dose Irradiation Table 6 Electrical Characteristics @ TJ = 25°C, Post Total Dose Irradiation 3, 4 Symbol Parameter Up to 300krads (Si)5 Unit Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 60 — V VGS = 0V, ID = 1mA VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS ≥ VGS, ID = 6.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 1.0 μA VDS = 48V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) 2 — 6.0 m VGS = 12V, ID2 = 75A RDS(on) Static Drain-to-Source On-State Resistance (SupIR-SMD)2 — 4.0 m VGS = 12V, ID2 = 100A VSD Diode Forward Voltage — 1.2 V VGS = 0V, IF = 75A 1 Repetitive Rating; Pulse width limited by maximum junction temperature. 2 Pulse width 300 μs; Duty Cycle 2% 3 Total Dose Irradiation with VGS Bias. VGS = 12V applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. 4 Total Dose Irradiation with VDS Bias. VDS = 48V applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 5 Part numbers IRHNS9A7064 (JANSR2N7652U2A) and IRHNS9A3064 (JANSF2N7652U2A) 6 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Device Characteristics 2.4.2 Single Event Effects – Safe Operating Area IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. 1 and Table 7. Table 7 Typical Single Event Effects Safe Operating Area LET (MeV·cm2/mg) Energy (MeV) Range (μm) VDS (V) VGS = 0V VGS = -1V VGS = -5V VGS = -10V 38 ± 5% 355 ± 7.5% 43 ± 7.5% 60 60 60 60 60 ± 5% 753 ± 7.5% 60 ± 10% 60 60 60 60 90 ± 5% 1515 ± 7.5% 82 ± 7.5% 60 60 — — Figure 1 Typical Single Event Effect, Safe Operating Area 7 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Electrical Characteristics Curves (Pre-irradiation) 3 Electrical Characteristics Curves (Pre-irradiation) Figure 2 Typical Output Characteristics Figure 3 Typical Output Characteristics Figure 4 Typical Transfer Characteristics Figure 5 Normalized On-Resistance Vs. Temperature 8 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Electrical Characteristics Curves (Pre-irradiation) Figure 6 Typical On-Resistance Vs. Gate Voltage Figure 7 Typical On-Resistance Vs. Drain Current Figure 8 Typical Drain-to-Source Breakdown Voltage Vs. Temperature Figure 9 Typical Threshold Voltage Vs. Temperature 9 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Electrical Characteristics Curves (Pre-irradiation) Figure 10 Typical Capacitance Vs. Drain-to-Source Voltage Figure 11 Typical Gate Gate-to-Source Voltage Vs. Gate Charge Figure 12 Typical Source-Drain Vs. Diode Forward Voltage Figure 13 Maximum Drain Current Vs.Case Temperature 10 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Electrical Characteristics Curves (Pre-irradiation) Figure 14 Maximum Safe Operating Area Figure 15 Maximum Avalanche Energy Vs. Drain Current Figure 16 Maximum Effective Transient Thermal Impedance, Junction-to-Case 11 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Test Circuits (Pre-irradiation) 4 Test Circuits (Pre-irradiation) Figure 17 Gate Charge Test Circuit Figure 18 Gate Charge Waveform Figure 19 Unclamped Inductive Test Circuit Figure 20 Unclamped Inductive Waveform Figure 21 Switching Time Test Circuit Figure 22 Switching Time Waveforms 12 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Package Outline 5 Package Outline Note: For the most updated package outline, please see the website: SupIR-SMD 13 of 14 2026-10-22 IRHNS9A7064 (JANSR2N7652U2A) Radiation Hardened Power MOSFET (SupIR-SMD™) Revision history Revision history Document version Date of release Description of changes 10/21/2019 Preliminary datasheet with PPD number (PPD-97894) Rev A 07/13/2020 Final datasheet with PD number Rev B 03/08/2021 Updated based on ECN 1120_08441 Rev C 10/22/2026 Updated based on ECN- Z8F80985677 Edition 2026-10-22 Published by International Rectifier HiRel Products, Inc. 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