Features Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Surface Mount Ceramic Package Light Weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Symbol Parameter Value Units ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current 3.4 AID2 @ VGS = 12V, TC = 100°C Continuous Drain Current 2.2 IDM @TC = 25°C Pulsed Drain Current 13.6 PD @TC = 25°C Maximum Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 76 mJ IAR Avalanche Current 3.4 A EAR Repetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery dv/dt 9.2 V/ns TJ Operating Junction and -55 to + 150 °CTSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g SMD-0.5 2N7598U3 IRHNJ67C30 1 2021-02-05 Product Summary Part Number Radiation Level RDS(on) ID IRHNJ67C30 100 kRads(Si) 3.1 3.4A IRHNJ63C30 300 kRads(Si) 3.1 3.4A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) For Footnotes refer to the page 2. PD-97198E Description 600V, N-CHANNEL TECHNOLOGY IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. International Rectifier HiRel Products, Inc. 2 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.47 ––– V/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-State ––– ––– 3.1 VGS = 12V, ID2 = 2.2A Resistance VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 1.0mA Gfs Forward Transconductance 3.4 ––– ––– S VDS = 15V, ID2 = 2.2A IDSS Zero Gate Voltage Drain Current ––– ––– 10 μA VDS = 480V, VGS = 0V ––– ––– 25 VDS = 480V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V QG Total Gate Charge ––– ––– 52 nC ID1 = 3.4A QGS Gate-to-Source Charge ––– ––– 14 VDS = 300V QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 17 VGS = 12V td(on) Turn-On Delay Time ––– ––– 25 ns VDD = 300V tr Rise Time ––– ––– 17 ID1 = 3.4A td(off) Turn-Off Delay Time ––– ––– 44 RG = 7.5 tf Fall Time ––– ––– 17 VGS = 12V Ls +LD Total Inductance ––– 4.0 ––– nH Measured from the center of drain pad to center of source pad Ciss Input Capacitance ––– 1222 ––– pF VGS = 0V Coss Output Capacitance ––– 80 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 1.9 ––– ƒ = 1.0MHz RG Gate Resistance ––– 1.5 ––– ƒ = 1.0MHz,open drain Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) ––– ––– 3.4 A ISM Pulsed Source Current (Body Diode) ––– ––– 13.6 VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 3.4A, VGS = 0V trr Reverse Recovery Time ––– ––– 741 ns TJ = 25°C, IF = 3.4A, VDD ≤ 50V Qrr Reverse Recovery Charge ––– ––– 2.1 μC di/dt = 100A/μs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25°C, L = 13mH, Peak IL = 3.4A, VGS = 12V ISD 3.4A, di/dt 628A/μs, VDD 600V, TJ 150°C Pulse width 300 μs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. 480 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. Thermal Resistance Symbol Parameter Min. Typ. Max. Units RJC Junction-to-Case ––– ––– 1.67 °C/W 3 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Symbol Parameter Up to 300 kRads (Si)1 Units Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 600 ––– V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward ––– 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse ––– -100 nA VGS = -20V IDSS Zero Gate Voltage Drain Current ––– 10 μA VDS = 480V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) ––– 3.1 VGS = 12V, ID = 2.2A RDS(on) Static Drain-to-Source On-State Resistance (SMD-0.5) ––– 3.1 VGS = 12V, ID = 2.2A VSD Diode Forward Voltage ––– 1.2 V VGS = 0V, ID = 3.4A IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1 Part numbers IRHNJ67C30 and IRHNJ63C30 Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Energy (MeV) Range (μm) VDS (V) @VGS=0V @VGS=-2V @VGS=-10V @VGS=-15V Kr 28.5 ± 5% 977 ± 5% 125.6 ± 5% 600 600 600 600 Xe 54 ± 7.5% 1660± 5% 132.2 ± 10% 600 600 600 ––– Au 83.6 ± 5% 2494 ± 5% 130.7 ± 5% 600 600 ––– ––– 4 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 3. Typical Transfer Characteristics Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 5 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 6 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveformtp V(BR)DSS IAS Fig 14b. Switching Time WaveformsFig 14a. Switching Time Test Circuit 7 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. Case Outline and Dimensions - SMD-0.5 Note: For the most updated package outline, please see the website: SMD – 0.5 8 2021-02-05 IRHNJ67C30, 2N7598U3 Pre-Irradiation International Rectifier HiRel Products, Inc. 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