Infineon IR HiRel’s rad hard GaN transistor has achieved a major milestone as one of the first DLA-qualified GaN devices to enter the high reliability market with MIL-PRF-19500 JANS certification. By combining Infineon’s industry- leading GaN design and manufacturing expertise with IR HiRel’s 80 years of experience in developing space-grade electronics, our cutting-edge 100 V rad hard GaN device sets a new standard in extreme environment applications. Commercial-off-the-shelf (COTS) options are also available. With Total Ionizing Dose (TID) and Single Event Effects (SEE) specifications at product level, our GaN device ensures utmost reliability in mission-critical operations and extended space missions. Optimized for systems where size, weight, and power (SWaP) advantages are paramount, our best-in-class GaN transistor minimizes power losses, maximizes power density, and delivers improved thermal management capabilities, all supporting a reduced payload mass. Our GaN transistor is available in three variations with COTS and JANS screening levels, each featuring a low RDS(ON), low gate charge, and zero reverse recovery charge – ideal characteristics for switching applications such as DC- DC converters and motor controllers. By enabling the design of high-frequency power management circuits, our device supports the development of a new generation of extremely robust, efficient, and lightweight power management and distribution systems. PRODUCT BRIEF 100 V rad hard GaN transistor for space applications Infineon IR HiRel’s first DLA-qualified GaN device for high reliability space applications ‒ Single Event Effect (SEE) hardened up to LET(GAN)1=70 MeV.cm2/mg (Au ion) ‒ Ultra-low RDS(ON) ‒ Low total gate charge ‒ Zero reverse recovery charge ‒ Hermetically sealed ceramic package ‒ Surface mount ‒ Light weight ‒ ESD rating: Class 1C per MIL- STD-750, Method 1020 Key features ‒ VDS max: 100 V ‒ ID: 52 A ‒ RDS(on) max: 6.0 mΩ ‒ QG max: 13 nC ‒ Size: 7.1 mm x 5.3 mm ‒ REF: MIL-PRF-19500 / 794 Product summary www.infineon.com/hirel ‒ Isolated DC-DC converters ‒ Point-of-load (PoL) converters for FPGA, ASIC, and DSP core rails ‒ Synchronous rectification ‒ Motor drives Potential applications Part number Package VDS (max) IDS (max) RDS(ON) at 25°C (max) QG (max) Qrr TID level Screening level IG1NT052N10R PowIR-SMD 100 V 52 A 6.0 mΩ 13 nC 0 nC 100 kRad(Si) COTS IG1NT052N10G PowIR-SMD 100 V 52 A 6.0 mΩ 13 nC 0 nC 500 kRad(Si) COTS JANSG2N7697UFHC PowIR-SMD 100 V 52 A 6.0 mΩ 13 nC 0 nC 500 kRad(Si) JANS Our GaN transistor has been characterized in heavy ion environment for SEE. The device is SEE hardened at LET(GAN)1=70 MeV.cm2/mg with Vds=100 V and Vgs=-5V. Our JANS transistor is qualified per MIL-PRF-19500 with slash sheet 794. Product table PRODUCT BRIEF 100 V rad hard GaN transistor for space applications Infineon IR HiRel’s first DLA-qualified GaN device for high reliability space applications www.infineon.com/hirel Published by International Rectifier HiRel Products, Inc. An Infineon Technologies Company El Segundo, California 90245 USA © 2025 Infineon Technologies AG All rights reserved. Public Date: 05/ 2025 Please note! This Docume nt is for information purpose s only and any information give n he re in shall in no e ve nt be re garde d as a warranty, guarante e or de scription of any functionality, conditions and/or quality of our products or any suitability for a particular purpose. With regard to the technical specifications of our products, we kindly ask you to refer to the relevant product data sheets provided by us. Our customers and their technical de partme nts are re quire d to e valuate the suitability of our products for the intended application. We re se rve the right to change this docume nt and/or the information given herein at any time. Additional information For furthe r information on te chnologie s, our products, the application of our products, de live ry te rms and conditions and/or prices, pleasecontact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to te chnical re quire me nts, our products may contain dange rous substance s. For information on the type s in que s- tion, please contact your nearest Infineon Technologies office. Infine on Te chnologie s Compone nts may only be use d in life-support devices or systems with the expressed written ap- proval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-sup - port device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sus- tain and/or prote ct human life . If the y fail, it is reasonable to assume that the he alth of the use r or othe r pe rsons may be endangered.