Announcements ALERT! Community is fighting spam attacks at present. Read updates here. Rad hard GaN transistor achieves JANS qualification for top-tier space performance Rad hard GaN transistor achieves JANS qualification for top-tier space performance â20 Aug 2025 08:53 PM Infineon IR HiRel has achieved an industry milestone with the release of the first internally manufactured radiation hardened Gallium Nitride (GaN) transistor to earn top-level MIL-PRF-19500 Joint Army Navy Space (JANS) certification from the Defense Logistics Agency (DLA). This accomplishment marks one of the first times a rad hard GaN device has met the highest Qualified Manufacturers list (QML) standards for space and defense applications. The cutting-edge rad hard GaN device is a 100 V transistor that ensures the utmost reliability in mission-critical operations while minimizing power losses, maximizing power density, and delivering improved thermal management capabilities. This blog post reviews the basics of DLA JANS certification, including the rigorous certification testing requirements needed for qualification. Continue reading to learn how the DLA device sets a new standard for reliability and performance in space applications. See the datasheet for a closer look at how the rad hard GaN device performs. Significance of DLA JANS certification DLA JANS qualification is the industryâs most rigorous testing and certification process that ensures consistent quality and reliability of electronic components in extreme environments, namely, space applications. To ensure the long-term reliability of these devices, components must be tested under extreme environmental conditions found in space, such as intense radiation, extreme temperatures, vibration, and mechanical stress. Earning JANS certification guarantees the performance of a device, particularly under extreme environment applications. See the datasheet for a closer look at testing requirements. Radiation performance As part of the MIL-PRF-19500 JANS certification process, Infineonâs rad hard GaN transistor completed extensive radiation testing to ensure its performance in space applications, such as those found in deep space. Radiation can cause irreversible damage to a deviceâs internal structure and lead to electrical malfunctions or complete system failure. As such, receiving JANS certification for radiation performance is a critical step in ensuring reliability in the most extreme radiation environments space systems encounter. The device is specified for both Total Ionizing Dose (TID) and Single Event Effects (SEE). The device is TID rated up to 500 krad(Si), demonstrating stable operation under cumulative radiation exposure. Even after exposure, the device continued to meet key electrical parameters such as on-resistance, gate threshold voltage, and leakage currents, demonstrating its high-performance ability. These tests were performed in accordance with MIL-STD-750, Method 1019, the standard procedure for space-grade radiation testing. For SEE, the device was shown to be hardened up to a LET(GaN) of 70 MeV.cm2/mg while operating at 100 V, ensuring it can maintain reliable operation without error. The equivalent for Si is 86.5 MeV.cm2/mg. Refer to the datasheet for radiation tables. Electrical performance In addition to radiation testing, the transistorâs electrical performance was evaluated both before and after irradiation. With an RDS(ON) of 6.0 mW max, low total gate charge of 13 nC, and zero reverse recovery charge, the device enables fast, energy-efficient switching, reducing power loss in a variety of power conversion and distribution architectures. These values were tested under standard test conditions and across wide temperatures ranging from 25°C to 125°C, ensuring reliable operation in thermally demanding space applications. Dynamic RDS(ON) and burn-in Lastly, burn-in testing and dynamic RDS(ON) testing play an important role in qualifying our GaN technology to the JANS standard. The device underwent up to 1,000 hours of burn-in stress per Method 1042 , exposing it to accelerated voltage and temperature to screen out extrinsic failures and confirm long-term reliability. Infineon's GaN device underwent dynamic RDS(on) testing according to testing methods JEP173 and JEP180 to characterize the degree of RDS(on) growth under switching conditions. Overall, these tests validated that the GaN device performs reliably and consistently under extreme operating environments that are mission-critical to space applications. See the full slash sheet to see detailed testing procedures and methods. Commitment to reliability DLA certification signifies a years-long rigorous process to ensure consistent reliability within a productâs manufacturing techniques and performance characteristics. Certification reflects IR HiRelâs commitment to a long-lasting and reliable assembly line. The internal foundry enables us full control over quality, consistency, and traceability of our products. This level of oversight is essential in our mission to meet the standards for quality assurance, long-term reliability, and supply chain stability. Conclusion IR HiRelâs rad hard GaN transistor is a major breakthrough for GaN technology, enabling the technologyâs use in space-qualified systems where reliability and performance are critical. Our achievement unlocks the potential for smaller, reliable, and more efficient power management systems in space applications. With this milestone, Infineon IR HiRel not only raises the bar for power performance in the high reliability market, but also sets a new industry standard on GaN for space applications. Download the datasheet to learn what makes GaN device an industry standout. Copy Link You must be a registered user to add a comment. 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