Please read the Important Notice and Warnings at the end of this document www.infineon.com/irhirel page 1 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) PD-98011C Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) 100V, 52A, N-channel, Enhancement mode Features • Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV.cm2/mg (Au ion) • Ultra low RDS(on) • Low total gate charge • Zero reverse recovery charge • Hermetically sealed ceramic package • Surface mount • Light weight • ESD rating: Class 1C per MIL-STD-750, Method 1020 Potential Applications • Isolated DC-DC converters • Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails • Synchronous rectification • Motor drives Product Validation Validated based on MIL-PRF-19500 for space applications Description IG1NT052N10R is part of the IR HiRel family of products. IR HiRel radiation hardened GaN transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). The combination of low RDS(on), low gate charge and zero reverse recovery charge reduces the power losses in switching applications such as DC-DC converters and motor control. These devices enable high-frequency operation of power management circuits resulting in high-power density and low payload mass. Ordering Information Table 1 Ordering options Part number Package Screening Level TID Level IG1NT052N10R PowIR-SMD COTS 100 krad(Si) IG1NT052N10G PowIR-SMD COTS 500 krad(Si) JANSG2N7697UFHC PowIR-SMD JANS 500 krad(Si) 1 LET Si equivalent = 86.5 MeV.cm2/mg Product Summary • VDS max: 100V • ID: 52A • RDS(on) max : 6.0m • QG max: 13nC • Size: 7.1mm x 5.3mm • REF: MIL-PRF-19500 / 794 PowIR-SMD 2 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Table of contents Table of contents Features ........................................................................................................................................ 1 Potential Applications ..................................................................................................................... 1 Product Validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Ordering Information ...................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Absolute Maximum Ratings ..................................................................................................... 3 2 Recommended Operating Conditions ....................................................................................... 3 3 Device Characteristics ............................................................................................................ 4 3.1 Electrical Characteristics (Pre-Irradiation) ............................................................................................. 4 3.2 Reverse Operation - Ratings and Characteristics (Pre-Irradiation) ....................................................... 5 3.3 Thermal Characteristics .......................................................................................................................... 5 3.4 Radiation Characteristics ........................................................................................................................ 5 3.4.1 Electrical Characteristics - Post Total Dose Irradiation .................................................................... 5 3.4.2 Single Event Effects – Safe Operating Area ....................................................................................... 6 4 Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7 5 Package Outline .................................................................................................................... 12 Revision history............................................................................................................................. 13 3 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings (Pre-Irradiation) Symbol Parameter Min. Typ. Max. Unit Test Conditions VDS Continuous Drain-to-Source Voltage — — 100 V VGS = 0V, ID = 0A VDS, pulse Pulsed Drain-to-Source Voltage 1 — — 120 V VGS = 0V, 1h total time ID1 Continuous Drain Current — — 52 A VGS = 5V, TC = 25°C ID2 Continuous Drain Current — — 33 A VGS = 5V, TC = 100°C ID, pulse Pulsed Drain Current2 — — 208 A TC = 25°C VGS Pulsed Gate-source Voltage 1 -6.5 — +6.5 V Pulsed 100h total time PD Maximum Power Dissipation — — 30 W TC = 25°C Linear Derating Factor — — 0.24 W/°C TJ TSTG Operating Junction and Storage Temperature Range -55 — 150 °C Package Mounting Surface Temperature — — 300 °C for 5s Weight — — 0.23 g 2 Recommended Operating Conditions Table 3 Recommended operating conditions Symbol Parameter Min. Typ. Max. Unit Test Conditions VGS Gate-Source voltage (DC) -5.0 4.8 5.1 V VGS Gate-Source voltage (transient)3 -5.5 — 5.5 V 1 Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2 Repetitive Rating; Pulse width limited by maximum junction temperature. 3 Pulse width < 50 ns 4 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Device Characteristics 3 Device Characteristics 3.1 Electrical Characteristics (Pre-Irradiation) Table 4 Static and Dynamic Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions VDS max Drain-to-Source Voltage, continuous — — 100 V VGS = 0V, ID = 0A RDS (on) Static Drain-to-Source On-State Resistance — 4.0 6.0 m VGS = 5V, ID = 33A 1 VGS (th) Gate Threshold Voltage 1.0 1.5 2.0 V VDS = VGS, ID = 8.0mAVGS(th)/TJ Gate Threshold Voltage Coefficient — -5.0 — mV/°C IDSS Zero Gate Voltage Drain Current — 0.1 10 A VDS = 100V, VGS = 0V — 10 100 VDS = 100V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — 0.03 0.5 mA VGS = 5.0V, TJ = 25°C 0.5 1 VGS = 5.0V, TJ = 125°C Gate-to-Source Leakage Reverse — 0.2 1 A VGS = -5.0V, TJ = 25°C 2.5 10 VGS = -5.0V, TJ = 125°C RG Gate Resistance — 1.5 — ƒ = 1.0MHz, open drain QG Total Gate Charge — 8.8 13 nC ID = 33A VDS = 50V VGS = 5.0V QGS Gate-to-Source Charge — 3.1 — QGD Gate-to-Drain (‘Miller’) Charge — 1.1 — QOSS Output Charge — 44 — nC VDD = 50V, VGS = 0V Ciss Input Capacitance — 820 — pF VGS = 0V VDS = 50V ƒ = 1.0MHz Coss Output Capacitance — 510 — Crss Reverse Transfer Capacitance — 7.7 — 1 Pulse width 300 μs; Duty Cycle 2% 5 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Device Characteristics 3.2 Reverse Operation - Ratings and Characteristics (Pre-Irradiation) Table 5 Reverse Operation Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions IS Continuous Source Current — — 52 A TJ = 25°C ISM Pulsed Source Current 1 — — 208 A TJ = 25°C VSD Forward Voltage — 2.1 3.9 V TJ = 25°C, IS = 33A, VGS = 0V 2 Qrr Reverse Recovery Charge — 0 — nC TJ = 25°C, IS = 33A, VDD = 50V diS/dt = 100A/μs 3.3 Thermal Characteristics Table 6 Thermal Resistance Symbol Parameter Min. Typ. Max. Unit RJC Junction-to-Case — 1.9 4.0 °C/WRJ-PCB Junction-to-Case-with Heat Sink — 20 25 RJA Junction-to-Ambient -Devices on PCB (in free air) — 45 70 3.4 Radiation Characteristics IR HiRel Radiation Hardened GaN transistors are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 3 and 4.) Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 3.4.1 Electrical Characteristics - Post Total Dose Irradiation Table 7 Electrical Characteristics @ TJ = 25°C, Post Total Dose Irradiation 3, 4 Symbol Parameter Up to 500 krad (Si) 5 Unit Test Conditions Min. Max. VDS max Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 0A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 8.0mA IGSS Gate-to-Source Leakage Forward — 0.5 mA VGS = 5V Gate-to-Source Leakage Reverse — 1.0 μA VGS = -5V IDSS Zero Gate Voltage Drain Current — 10 μA VDS = 100V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (Package PowIR-SMD) 2 — 6.0 m VGS = 5V, ID = 33A VSD Source-Drain Forward Voltage — 3.9 V VGS = 0V, IS = 33A 1 Repetitive Rating; Pulse width limited by maximum junction temperature 2 Pulse width 300 μs; Duty Cycle 2% 3 Total Dose Irradiation with VGS Bias. VGS = 5V applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. 4 Total Dose Irradiation with VDS Bias. VDS = 80V applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 5 Part numbers IG1NT052N10R (100 krad(Si)) and IG1NT052N10G (JANSG2N7697UFHC) 500 krad(Si) 6 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Device Characteristics 3.4.2 Single Event Effects – Safe Operating Area IR HiRel radiation hardened GaN transistors have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Figure 1 and Table 8. Table 8 Typical Single Event Effects Safe Operating Area Ion LET (GaN) 1 (MeV.cm2/mg) Energy (GaN) (MeV) Range (GaN) (μm) VDS (V) VGS = 0V VGS = -5V Au 70 ± 5% 1713 ± 5% 48 ± 5% 100 100 Figure 1 Typical Single Event Effect, Safe Operating Area 1 LET Si equivalent = 86.5 MeV.cm2/mg 7 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Electrical Characteristics Curves (Pre-irradiation) 4 Electrical Characteristics Curves (Pre-irradiation) Figure 2 Typical Output Characteristics Figure 3 Typical Output Characteristics Figure 4 Typical Transfer Characteristics Figure 5 Normalized On-Resistance Vs. Temperature 8 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Electrical Characteristics Curves (Pre-irradiation) Figure 6 Typical On-Resistance Vs. Gate Voltage Figure 7 Typical On-Resistance Vs. Drain Current Figure 8 Typical Threshold Voltage Vs. Temperature Figure 9 Typical Capacitance Vs. Drain-to-Source Voltage 9 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Electrical Characteristics Curves (Pre-irradiation) Figure 10 Typical Gate Charge Vs. Gate-to-Source Voltage Figure 11 Typical Source-Drain Current Vs. Source-Drain Voltage (reverse output characteristics) Figure 12 Typical Output Charge Figure 13 Typical Output Energy0 10 20 30 40 50 60 70 0 25 50 75 100 125 Qoss, Output Charge (nC) VDS, Drain-to-Source Voltage (V)0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 Eoss (uJ) VDS, Drain-to-Source Voltage (V) 10 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Electrical Characteristics Curves (Pre-irradiation) Figure 14 Maximum Safe Operating Area Figure 15 Maximum Drain Current Vs. Case Temperature Figure 16 Typical Gate-Source Leakage Current Vs. Gate-Source Voltage (Positive voltage) Figure 17 Typical Gate-Source Leakage Current Vs. Gate-Source Voltage (Negative Voltage)0.001 0.01 0.1 1 10 100 1000 10000 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IGSS,Gate-source leakage current (μA) VGS Gate-to-Source Voltage (V) TJ = 150 C TJ = 125°C TJ = 25°C0.001 0.01 0.1 1 10 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 IGSS,Gate-source leakage current (μA) VGS Gate-to-Source Voltage (V) TJ = 150 C TJ = 125°C TJ = 25°C0 10 20 30 40 50 60 25 50 75 100 125 150 ID, Drain Current (A) TC, CASE TEMPERATURE ( C) 11 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Electrical Characteristics Curves (Pre-irradiation) Figure 18 Maximum Effective Transient Thermal Impedance, Junction-to-Case0.01 0.1 1 10 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Thermal Response ( Z thJC )RESISTANCE t1 , Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE (THERMAL RESPONSE ) 0.01 0.02 0.1 0.2 0.05 D = 0.5 Figure 19 Gate Charge Waveform 12 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Package Outline 5 Package Outline Note: For the most updated package outline, please see the website: PowIR-SMD Pin Description: Pin 1: Kelvin Source: This pin can be used for the gate return. It is optimized to help the gate drive loop. Pin 1 and Pin 3 are at the same potential. Pin 2: Drain: This pin is optimized as a power pin to conduct current between drain and source. Pin 3: Source: This pin is optimized as a power pin to conduct current between drain and source, it is at the same potential as Pin 1. Pin 4: Gate: The control pin for the device. 13 of 14 2026-04-07 IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) Revision history Revision history Document version Date of release Description of changes 02/22/2024 Preliminary datasheet with PPD number (PPD-98011) Rev A 05/30/2025 Final datasheet with PD number Rev B 07/30/2025 Updated based on ECN-Z8F80816562 Rev C 04/07/2026 Updated based on ECN-Z8F80915961 Edition 2026-04-07 Published by International Rectifier HiRel Products, Inc. An Infineon Technologies company El Segundo, California 90245 USA © 2026 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: [email protected] Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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