PRODUCT BRIEF RIC70115 Radiation hardened gate-driver engineered for GaN HEMTs and logic level FETs in high- and low-side configurations RIC70115 sets a new standard in space-grade power management, providing robust gate drive capabilities for extreme radiation environments. Designed for high reliability applications, RIC70115 is the only radiation hardened, Gallium Nitride (GaN)-based gate driver on the market supporting both high- and low-side configuration. The RIC70115 offers flexible power options, supporting a tightly regulated 4.8 V drive voltage with a 5 V or 12 V source. With Single Event Effects (SEE) characterized to a Linear Energy Transfer (LET) of 81.9 MeV·cm2/mg and a Total Ionizing Dose (TID) of 100 krad(Si), RIC70115 is engineered to sustain reliable and robust electrical performance throughout mission lifetime. Available in a hermetically sealed 16-pin LCC package, the device operates across the full military ambient temperature range of -55°C to 125°C. RIC70115 is optimized for driving both GaN HEMTs and logic-level Silicon (Si) FETs, such as Infineon HiRel’s R8 rad hard MOSFETs, supporting both high- side and low-side configurations. The gate driver ensures safe operation independent of the bias voltage through an integrated linear regulator that provides optimal gate drive voltage across a wide bias range. The independent Miller Clamp and truly differential input (TDI) logic dramatically improve noise immunity, a crucial factor in the electrically noisy environment of a spacecraft. The device’s integrated low dropout (LDO) regulator offers additional flexibility in power supply design. Choose RIC70115 for satellite bus and payload applications, such as within power conditioning units, power distribution units, and DC-DC converters. RIC70115EVAL1, the device’s evaluation board, is available now. RIC70115 is planned for electrical screening and qualification to MIL-PRF-38535, Class V. Key features ‒ Wide supply voltage range of 4.75 V to 15 V ‒ Regulated 4.8 V drive voltage ‒ Source current of 1.5 A ‒ Sink current of 2.5 A ‒ Low matching propagation delay 2.9 ns (abs max) ‒ TID of 100 krad(Si) ‒ SEE: SEL, SEB, SEGR free and SET characterized up to LET 81.9 MeV·cm2/mg ‒ Integrated low dropout (LDO) regulator ‒ Separate source and sink pins ‒ Dedicated Miller Clamp pin ‒ Dedicated gate drive return COM pin ‒ Truly differential input logic Benefits www.infineon.com/space ‒ Satellite bus and payload ‒ Power conditioning unit ‒ Power distribution unit ‒ DC-DC converter Potential applications 16-pin LCC Ordering information Orderable part number Package type Device level Total ionizing dose level 5962R2420701Vxx 16-pin LCC Level V1,3 100 krad(Si) RIC70115G 16-pin LCC COTS2 RIC70115EVAL1 Evaluation board PRODUCT BRIEF The RIC70115 delivers robust switching performance tailored for high-speed electronic payloads and advanced FPGA interfaces, driving both GaN HEMTs and logic-level Si FETs. By combining flexible power architecture with best-in-class rad hard engineering, the gate driver ensures optimal efficiency across modern power designs and reliable operation in complex electronic systems. 1 Per MIL-PRF-38535 2 Intended for engineering evaluation only, devices are only tested at 25°C and for hermeticity 3 MIL-PRF-38535 QMLV certification pending www.infineon.com/hirel Published by International Rectifier HiRel Products, Inc. An Infineon Technologies Company El Segundo, California 90245 USA © 2026 Infineon Technologies AG All rights reserved. Public Date: 07/ 2026 Please note! This Docume nt is for information purpose s only and any information give n he re in shall in no e ve nt be re garde d as a warranty, guarante e or de scription of any functionality, conditions and/or quality of our products or any suitability for a particular purpose. With regard to the technical specifications of our products, we kindly ask you to refer to the relevant product data sheets provided by us. Our customers and their technical de partme nts are re quire d to e valuate the suitability of our products for the intended application. We re se rve the right to change this docume nt and/or the information given herein at any time. Additional information For furthe r information on te chnologie s, our products, the application of our products, de live ry te rms and conditions and/or prices, pleasecontact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to te chnical re quire me nts, our products may contain dange rous substance s. For information on the type s in que s- tion, please contact your nearest Infineon Technologies office. Infine on Te chnologie s Compone nts may only be use d in life-support devices or systems with the expressed written ap- proval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-sup - port device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sus- tain and/or prote ct human life . If the y fail, it is reasonable to assume that the he alth of the use r or othe r pe rsons may be endangered.