E-Mode GaN Transistor Works Like Silicon MOSFET for Easier Design-In

Check out our PCIM 2022 coverage.

Cambridge GaN Devices (CGD), a spin-out of Cambridge University, is a fabless semiconductor company that develops a range of energy-efficient, enhancement-mode GaN-based power devices.CGD introduced ICeGaN, presented as the first enhancement-mode GaN transistor that can be operated like a silicon MOSFET without the need for special gate drivers, driving circuitry, or unique gate-voltage-clamping mechanisms.

Users can operate CGD’s GaN devices with standard gate drivers, up to 20 to 22 V. With a built-in Miller clamp and a threshold voltage set at around 3 V, users don’t need to provide negative gate voltages to keep the device OFF when it's supposed to be OFF.

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