Promising higher efficiencies, the QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules can operate at temperatures well beyond those possible with silicon IGBT-based modules with 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operating at 20 kHz. The modules employ a half-bridge configuration and feature 100A of SiC MOSFET per switch with two switches per model. Both styles feature all silicon carbide Schottky diodes for reverse recovery and all components and interconnects are isolated from the heat sinking baseplate. Sample prices for the QJD1210006 and QJD1210007 are $9,000 and $9,200 each, respectively. POWEREX INC., Youngwood, PA. (800) 451-1415.