It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.
Now, GaN devices are showing up in power applications such as switch-mode power supplies. Their lower on-resistance and faster switching times provide significantly improved efficiency.
Semiconductor companies have also found new ways to make GaN devices on silicon-carbide substrates and on the even lower-cost silicon substrates using standard processing techniques, which of course cuts costs overall. In addition, enhancement-mode devices are now available, as well as the original depletion-mode high-electron-mobility transistors (HEMT), becoming attractive options for designers in many more products.