A new 300V, N-channel HEXFET power MOSFET is designed to replace the electromechanical relays (EMRs) of telecomm and networking systems, producing gains in the overall reliability of these systems and taking up to 30% less space than the EMRs. The IRF3000 power FET is a solid-state device that offers more than a 90% reduction in on-state resistance compared to mechanical relays, minimizing conduction losses. It also boasts of an ultra-low gate charge, minimizing switching loss. Other claims made for the FET include a cost savings of up 30% compared to EMRs and a life expectancy approaching a billion switching cycles versus 100,000 to 10 million operations for the relays. The device has a 300V breakdown voltage and is targeted at switching applications requiring a low current (1.6A) switch with up to 200V input that does not require isolation. It can also be used where the load voltage does not reverse in polarity. In a SO-8 package, the FET costs $0.39 each/10,000. For more details, call Joe Engle at INTERNATIONAL RECTIFIER CORP., El Segundo, CA. (310) 252-7019.
Company: INTERNATIONAL RECTIFIER CORP.
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