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Can Silicon Qualification Standards be Applied to GaN HEMT Power Converters? (.PDF Download)

The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride on silicon (GaN-on-Si). Initially, much of the effort from manufacturers using GaN materials has been in the development of high-electron-mobility transistors (HEMTs) for RF applications such as radar.

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