The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride on silicon (GaN-on-Si). Initially, much of the effort from manufacturers using GaN materials has been in the development of high-electron-mobility transistors (HEMTs) for RF applications such as radar.
Register to view the full article
By registering on Electronic Design now, you'll not only gain access to premium content, you'll also become part of an exclusive, robust global engineering community!
Participate in Expert and Reader driven Q&A's
Start your own conversation by commenting on any article or blog
Download high-quality content including the highly anticipated Salary & Career Report